Monte Carlo analysis of high-field hole diffusion coefficients in nondegenerate GaAs

R. Joshi, R. O. Grondin

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We examine the field dependence of the carrier diffusion coefficients in GaAs using an ensemble Monte Carlo technique. An analysis for the field dependence of the hole diffusivity is presented for the first time. Unlike for the electrons, no significant interband transfer effects are observed. The hole diffusivity is seen to decrease monotonically with increasing field.

Original languageEnglish
Pages (from-to)2438-2439
Number of pages2
JournalApplied Physics Letters
Volume54
Issue number24
DOIs
StatePublished - 1989

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