We examine the field dependence of the carrier diffusion coefficients in GaAs using an ensemble Monte Carlo technique. An analysis for the field dependence of the hole diffusivity is presented for the first time. Unlike for the electrons, no significant interband transfer effects are observed. The hole diffusivity is seen to decrease monotonically with increasing field.
|Number of pages||2|
|Journal||Applied Physics Letters|
|State||Published - 1989|