Monte carlo analysis of GaN-based Gunn oscillators for microwave power generation is presented. The two device structures examined, include devices with the conventional single notch structure and repetitive structures with serial segments each consisting of the basic notch element to fashion a multiple domain device. Performance parameters such as the operating frequency, output power, and conversion efficiency were calculated. It was shown that multidomain Gunn diodes could lead to significant improvements in output power over conventional, single-transit structures.
|Number of pages||7|
|Journal||Journal of Applied Physics|
|State||Published - Apr 15 2003|