Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation

R. P. Joshi; S. Viswanadha; P. Shah; R. D. Del Rosario

doi:10.1063/1.1562734

Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation

R. P. Joshi, S. Viswanadha, P. Shah, R. D. Del Rosario

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Monte carlo analysis of GaN-based Gunn oscillators for microwave power generation is presented. The two device structures examined, include devices with the conventional single notch structure and repetitive structures with serial segments each consisting of the basic notch element to fashion a multiple domain device. Performance parameters such as the operating frequency, output power, and conversion efficiency were calculated. It was shown that multidomain Gunn diodes could lead to significant improvements in output power over conventional, single-transit structures.

Original language	English
Pages (from-to)	4836-4842
Number of pages	7
Journal	Journal of Applied Physics
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.1562734
State	Published - Apr 15 2003

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abstract = "Monte carlo analysis of GaN-based Gunn oscillators for microwave power generation is presented. The two device structures examined, include devices with the conventional single notch structure and repetitive structures with serial segments each consisting of the basic notch element to fashion a multiple domain device. Performance parameters such as the operating frequency, output power, and conversion efficiency were calculated. It was shown that multidomain Gunn diodes could lead to significant improvements in output power over conventional, single-transit structures.",

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AB - Monte carlo analysis of GaN-based Gunn oscillators for microwave power generation is presented. The two device structures examined, include devices with the conventional single notch structure and repetitive structures with serial segments each consisting of the basic notch element to fashion a multiple domain device. Performance parameters such as the operating frequency, output power, and conversion efficiency were calculated. It was shown that multidomain Gunn diodes could lead to significant improvements in output power over conventional, single-transit structures.

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Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation

Abstract

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