@inproceedings{dddff1b6c3ba45cead0134346c6c13e3,
title = "Monolithic class e SiGe power amplifier design with wideband high-efficiency and linearity",
abstract = "This paper discusses and compares the design of monolithic RF broadband Class E SiGe power amplifiers (PAs) centered at 900MHz that are highly efficient and linear. It is found that high power-added-efficiency (∼65%) can be achieved with PAs designed using either high-breakdown or high-fT SiGe transistors. The PAs designed with high-breakdown devices can provide ∼3% better efficiency at higher supply voltages but with worse bias sensitivity, inferior broadband frequency response, and slightly lower gain than those designed with high-fT devices. However, the Class E PAs designed using high-breakdown devices can be successfully linearized using an open-loop envelope tracking (ET) technique as their output spectra pass the stringent EDGE transmit mask with margins, achieving an overall system PAE of 44.4% that surpasses the ∼30% PAE obtainable using commercial GaAs Class AB PAs. These promising results indicate the feasibility of realizing true single-chip wireless transceivers with on-chip RF SiGe PAs for spectrally-efficient non-constant-envelope modulation schemes.",
author = "Lie, {Donald Y.C.} and Popp, {Jeremy D.} and Patrick Lee and Yang, {Annie H.} and Rowland, {Jason F.} and F. Wang and Don Kimball",
year = "2007",
doi = "10.1109/VDAT.2006.258128",
language = "English",
isbn = "1424401798",
series = "2006 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2006 - Proceedings of Technical Papers",
pages = "79--82",
booktitle = "2006 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2006 - Proceedings of Technical Papers",
note = "null ; Conference date: 26-04-2007 Through 28-04-2007",
}