Monolithic class e SiGe power amplifier design with wideband high-efficiency and linearity

Donald Y.C. Lie, Jeremy D. Popp, Patrick Lee, Annie H. Yang, Jason F. Rowland, F. Wang, Don Kimball

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

This paper discusses and compares the design of monolithic RF broadband Class E SiGe power amplifiers (PAs) centered at 900MHz that are highly efficient and linear. It is found that high power-added-efficiency (∼65%) can be achieved with PAs designed using either high-breakdown or high-fT SiGe transistors. The PAs designed with high-breakdown devices can provide ∼3% better efficiency at higher supply voltages but with worse bias sensitivity, inferior broadband frequency response, and slightly lower gain than those designed with high-fT devices. However, the Class E PAs designed using high-breakdown devices can be successfully linearized using an open-loop envelope tracking (ET) technique as their output spectra pass the stringent EDGE transmit mask with margins, achieving an overall system PAE of 44.4% that surpasses the ∼30% PAE obtainable using commercial GaAs Class AB PAs. These promising results indicate the feasibility of realizing true single-chip wireless transceivers with on-chip RF SiGe PAs for spectrally-efficient non-constant-envelope modulation schemes.

Original languageEnglish
Title of host publication2006 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2006 - Proceedings of Technical Papers
Pages79-82
Number of pages4
DOIs
StatePublished - 2007
Event2006 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2006 - Hsinchu, Taiwan, Province of China
Duration: Apr 26 2007Apr 28 2007

Publication series

Name2006 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2006 - Proceedings of Technical Papers

Conference

Conference2006 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2006
CountryTaiwan, Province of China
CityHsinchu
Period04/26/0704/28/07

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