A solid-state modular Marx Generator was designed for the purpose of testing the dV/dt capability of Power Semiconductor devices. The Marx Generator is capable of producing up to 1 kV voltage transients with rise times on the order of 10-nanoseconds. This capability to do variable voltage amplitude leads to customizable dV/dt tests. The solid-state modular design will be covered in detail within the paper. The solid-state construction allows for this adjustable dV/dt rating through the utilization of multiple modular stages of Power MOSFETs. These Power MOSFETs have a lower voltage blocking ability, but faster switch closing times. The different modules are controlled through the use of fiber-optic links. These links signal the floating Gate Driver circuitry to synchronize their switch closing time. The floating Gate Driver utilizes isolated switch-mode DC-DC converters to supply the power needed to charge the MOSFET gates, from one ground-referenced power source. The Marx Generator uses high voltage Silicon Carbide Schottky Diodes for the voltage blocking elements when the individual modular stages trigger. The lack of reverse recovery for these high voltage SiC Diodes enables the fast voltage transients that are requisite for dV/dt ranges needed to test Power Semiconductor devices.