Modification of electronic band structure in mL + nL (m = 1, 2; N = 1-5) free-stacking graphene

Jianting Ji, Rui He, Yinghao Jie, Anmin Zhang, Xiaoli Ma, Linjing Pan, Le Wang, Liyuan Zhang, Qing Ming Zhang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this paper, we studied stacked mL + nL graphene layers using Raman scattering spectroscopy. Our results indicate that the 2D band from stacked graphene can be considered as a superposition of those from the constituent nL and mL graphene layers, and a blueshift in the 2D band is observed when n or m = 1. The blueshift increases with the number of stacked layers and can be well understood by the reduction of Fermi velocity in the single layer graphene, as studied in the 1L + 1L (or twisted bilayer) case. As the number of stacked layers changes from 1 to 5, the Fermi velocity in the single layer graphene reduces to about 85% of its initial value. This study shows a convenient way to realize the modification of the Fermi velocity in free-stacking graphene and is of significance to the applications of graphene-based heterostructures.

Original languageEnglish
Article number153111
JournalApplied Physics Letters
Volume109
Issue number15
DOIs
StatePublished - Oct 10 2016

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