Modeling fast processes in semiconductors by Monte Carlo techniques

David K. Ferry, Alfred M. Kriman, Meng Jeng Kann, H. Hida, Seiichiro Yamaguchi, Ravindra P. Joshi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A secondary self-scattering process is introduced within a semiclassical Monte Carlo treatment of laser excitation in GaAs to treat the finite collision duration that arises for very fast scattering processes. Such an approach allows us to incorporate quantum collision retardation effects that go beyond both the normal Boltzmann transport equation and beyond the Fermi golden rule. This effect dramatically reduces the effect of the fast scattering process - the transfer of carriers from the central conduction band valey to the X valleys. This implies that such collision retardation effects are quite important in processes which have high Fermi golden rule scattering rates.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages128-138
Number of pages11
ISBN (Print)0819407305, 9780819407306
DOIs
StatePublished - 1992
EventRecent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine - New York, NY, USA
Duration: Jun 19 1991Jun 21 1991

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1599
ISSN (Print)0277-786X

Conference

ConferenceRecent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine
CityNew York, NY, USA
Period06/19/9106/21/91

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