Model for phonon-assisted indirect recombination at impurity sites in semiconductors: A test of impurity wave-function theories

Paul G. Snyder, Charles W. Myles, Hong Hai Dai, Martin A. Gundersen

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

A new method for studying the wave functions associated with defect levels is presented. The method is based on a model that includes the role of intrinsic lattice phonons in indirect electron-hole recombination at impurity sites in semiconductors; the model contains information about the impurity-phonon matrix elements and the intrinsic phonon dispersion relations as well. In particular, it can be used in conjunction with experimental data as a test of the accuracy of impurity wave-function models. As an illustration, an application to the acoustic-phonon sidebands in the low-temperature luminescence spectrum of the N-bound excition in GaP is described wherein the method is used to test the Koster-Slater one-band one-site approximation for the electron wave function.

Original languageEnglish
Pages (from-to)2685-2688
Number of pages4
JournalPhysical Review B
Volume32
Issue number4
DOIs
StatePublished - 1985

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