Details are presented concerning the growth of GaN and InGaN epilayers by metal-organic chemical vapor deposition and their in situ doping with erbium (Er). Structural properties of the Er-doped epilayers were examined using X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry. The photoluminescence characteristics of these films were measured and strain-induced effects were identified. Multilayer structures were processed into prototype light-emitting diodes that yielded an infrared emission at 1540. nm. Magnetic measurements of the Er-doped films were made at room temperature and hysteretic behavior was observed. Resonant excitation spectroscopy combined with an applied magnetic field, showed that the Er ions enter into a defect-related complex with critical impact on the optical and magnetic properties.
|Title of host publication||Rare Earth and Transition Metal Doping of Semiconductor Materials|
|Subtitle of host publication||Synthesis, Magnetic Properties and Room Temperature Spintronics|
|Number of pages||33|
|State||Published - Feb 23 2016|
- Electroluminescent devices
- III-Nitride semiconductors
- Room temperature magnetism