MOCVD growth of Er-doped III-N and optical-magnetic characterization

N. Nepal, H. X. Jiang, J. Y. Lin, B. Mitchell, V. Dierolf, J. M. Zavada

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Scopus citations

Abstract

Details are presented concerning the growth of GaN and InGaN epilayers by metal-organic chemical vapor deposition and their in situ doping with erbium (Er). Structural properties of the Er-doped epilayers were examined using X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry. The photoluminescence characteristics of these films were measured and strain-induced effects were identified. Multilayer structures were processed into prototype light-emitting diodes that yielded an infrared emission at 1540. nm. Magnetic measurements of the Er-doped films were made at room temperature and hysteretic behavior was observed. Resonant excitation spectroscopy combined with an applied magnetic field, showed that the Er ions enter into a defect-related complex with critical impact on the optical and magnetic properties.

Original languageEnglish
Title of host publicationRare Earth and Transition Metal Doping of Semiconductor Materials
Subtitle of host publicationSynthesis, Magnetic Properties and Room Temperature Spintronics
PublisherElsevier Inc.
Pages225-257
Number of pages33
ISBN (Electronic)9780081000601
ISBN (Print)9780081000410
DOIs
StatePublished - Feb 23 2016

Keywords

  • Electroluminescent devices
  • Erbium
  • III-Nitride semiconductors
  • MOCVD
  • Photoluminescence
  • Room temperature magnetism

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    Nepal, N., Jiang, H. X., Lin, J. Y., Mitchell, B., Dierolf, V., & Zavada, J. M. (2016). MOCVD growth of Er-doped III-N and optical-magnetic characterization. In Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics (pp. 225-257). Elsevier Inc.. https://doi.org/10.1016/B978-0-08-100041-0.00007-X