MOCVD growth of Er-doped III-N and optical-magnetic characterization

N. Nepal; H. X. Jiang; J. Y. Lin; B. Mitchell; V. Dierolf; J. M. Zavada

doi:10.1016/B978-0-08-100041-0.00007-X

MOCVD growth of Er-doped III-N and optical-magnetic characterization

N. Nepal, H. X. Jiang, J. Y. Lin, B. Mitchell, V. Dierolf, J. M. Zavada

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

2 Scopus citations

Abstract

Details are presented concerning the growth of GaN and InGaN epilayers by metal-organic chemical vapor deposition and their in situ doping with erbium (Er). Structural properties of the Er-doped epilayers were examined using X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry. The photoluminescence characteristics of these films were measured and strain-induced effects were identified. Multilayer structures were processed into prototype light-emitting diodes that yielded an infrared emission at 1540. nm. Magnetic measurements of the Er-doped films were made at room temperature and hysteretic behavior was observed. Resonant excitation spectroscopy combined with an applied magnetic field, showed that the Er ions enter into a defect-related complex with critical impact on the optical and magnetic properties.

Original language	English
Title of host publication	Rare Earth and Transition Metal Doping of Semiconductor Materials
Subtitle of host publication	Synthesis, Magnetic Properties and Room Temperature Spintronics
Publisher	Elsevier Inc.
Pages	225-257
Number of pages	33
ISBN (Electronic)	9780081000601
ISBN (Print)	9780081000410
DOIs	https://doi.org/10.1016/B978-0-08-100041-0.00007-X
State	Published - Feb 23 2016

Keywords

Electroluminescent devices
Erbium
III-Nitride semiconductors
MOCVD
Photoluminescence
Room temperature magnetism

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10.1016/B978-0-08-100041-0.00007-X

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Nepal, N., Jiang, H. X., Lin, J. Y., Mitchell, B., Dierolf, V., & Zavada, J. M. (2016). MOCVD growth of Er-doped III-N and optical-magnetic characterization. In Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics (pp. 225-257). Elsevier Inc.. https://doi.org/10.1016/B978-0-08-100041-0.00007-X

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title = "MOCVD growth of Er-doped III-N and optical-magnetic characterization",

abstract = "Details are presented concerning the growth of GaN and InGaN epilayers by metal-organic chemical vapor deposition and their in situ doping with erbium (Er). Structural properties of the Er-doped epilayers were examined using X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry. The photoluminescence characteristics of these films were measured and strain-induced effects were identified. Multilayer structures were processed into prototype light-emitting diodes that yielded an infrared emission at 1540. nm. Magnetic measurements of the Er-doped films were made at room temperature and hysteretic behavior was observed. Resonant excitation spectroscopy combined with an applied magnetic field, showed that the Er ions enter into a defect-related complex with critical impact on the optical and magnetic properties.",

keywords = "Electroluminescent devices, Erbium, III-Nitride semiconductors, MOCVD, Photoluminescence, Room temperature magnetism",

author = "N. Nepal and Jiang, {H. X.} and Lin, {J. Y.} and B. Mitchell and V. Dierolf and Zavada, {J. M.}",

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T1 - MOCVD growth of Er-doped III-N and optical-magnetic characterization

AU - Nepal, N.

AU - Jiang, H. X.

AU - Lin, J. Y.

AU - Mitchell, B.

AU - Dierolf, V.

AU - Zavada, J. M.

PY - 2016/2/23

Y1 - 2016/2/23

N2 - Details are presented concerning the growth of GaN and InGaN epilayers by metal-organic chemical vapor deposition and their in situ doping with erbium (Er). Structural properties of the Er-doped epilayers were examined using X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry. The photoluminescence characteristics of these films were measured and strain-induced effects were identified. Multilayer structures were processed into prototype light-emitting diodes that yielded an infrared emission at 1540. nm. Magnetic measurements of the Er-doped films were made at room temperature and hysteretic behavior was observed. Resonant excitation spectroscopy combined with an applied magnetic field, showed that the Er ions enter into a defect-related complex with critical impact on the optical and magnetic properties.

AB - Details are presented concerning the growth of GaN and InGaN epilayers by metal-organic chemical vapor deposition and their in situ doping with erbium (Er). Structural properties of the Er-doped epilayers were examined using X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry. The photoluminescence characteristics of these films were measured and strain-induced effects were identified. Multilayer structures were processed into prototype light-emitting diodes that yielded an infrared emission at 1540. nm. Magnetic measurements of the Er-doped films were made at room temperature and hysteretic behavior was observed. Resonant excitation spectroscopy combined with an applied magnetic field, showed that the Er ions enter into a defect-related complex with critical impact on the optical and magnetic properties.

KW - Electroluminescent devices

KW - Erbium

KW - III-Nitride semiconductors

KW - MOCVD

KW - Photoluminescence

KW - Room temperature magnetism

UR - http://www.scopus.com/inward/record.url?scp=84967146071&partnerID=8YFLogxK

U2 - 10.1016/B978-0-08-100041-0.00007-X

DO - 10.1016/B978-0-08-100041-0.00007-X

M3 - Chapter

AN - SCOPUS:84967146071

SN - 9780081000410

SP - 225

EP - 257

BT - Rare Earth and Transition Metal Doping of Semiconductor Materials

PB - Elsevier Inc.

ER -

MOCVD growth of Er-doped III-N and optical-magnetic characterization

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Keywords

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