Minimum noise figure of SiGe HBTs under different operation configurations

Hui Li, Robert A. Marsland, Guogong Wang, Guoxuan Qin, Zhenqiang Ma, Guofu Niu, Yan Cui, Donald Y.C. Lie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Minimum noise figure (NF min) of SiGe HBTs under common-base (CB) configuration is analyzed through noise modeling, calculation and measurements and compared with that under CE operation configuration. Results show that the two configurations have similar NF min at low frequencies. At high frequencies, the CB configuration has higher NF min than the CE configuration, while higher gain is exhibited by the CB configuration than the CE configuration. Tradeoff between NF min and power gain ought to be considered for circuits design in employing different configurations.

Original languageEnglish
Title of host publication2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Pages56-59
Number of pages4
DOIs
StatePublished - 2007
Event2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 - Long Beach, CA, United States
Duration: Jan 10 2007Jan 12 2007

Publication series

Name2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Conference

Conference2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
CountryUnited States
CityLong Beach, CA
Period01/10/0701/12/07

Keywords

  • Common-base (CB)
  • Common-emitter (CE)
  • HBT
  • Minimum noise figure (NF )
  • Power gain
  • SiGe

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    Li, H., Marsland, R. A., Wang, G., Qin, G., Ma, Z., Niu, G., Cui, Y., & Lie, D. Y. C. (2007). Minimum noise figure of SiGe HBTs under different operation configurations. In 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 (pp. 56-59). [4117324] (2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07). https://doi.org/10.1109/SMIC.2007.322768