Transmission electron microscopy, conventional and high-resolution, is used to characterize the microstructural behavior of oxidized Ge0.78Si0.12 layers annealed in a reducing 95% N2 + 5% H2 ambient. An epitaxial Ge layer grows by solid-phase epitaxy on an underlying Ge0.78Si0.12 seeding layer with a Ge-SiO2 matrix positioned between them. Defect densities in the epitaxial Ge are significantly lower than in the underlying Ge0.78Si0.12. Microstructural details of this behavior are investigated.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1995|
|Event||Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA|
Duration: Apr 17 1995 → Apr 20 1995