Microstructure of oxidized Ge0.78Si0.12 annealed in a reducing ambient

N. D. Theodore, W. S. Liu, D. Y.C. Lie, T. K. Cams, K. L. Wang

Research output: Contribution to journalConference article

Abstract

Transmission electron microscopy, conventional and high-resolution, is used to characterize the microstructural behavior of oxidized Ge0.78Si0.12 layers annealed in a reducing 95% N2 + 5% H2 ambient. An epitaxial Ge layer grows by solid-phase epitaxy on an underlying Ge0.78Si0.12 seeding layer with a Ge-SiO2 matrix positioned between them. Defect densities in the epitaxial Ge are significantly lower than in the underlying Ge0.78Si0.12. Microstructural details of this behavior are investigated.

Original languageEnglish
Pages (from-to)127-132
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume379
StatePublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 20 1995

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