The Si materials typically used to fabricate solar cells often contain high concentrations of carbon and hydrogen impurities. One of the more thermally stable defects in Si that contains both C and H gives rise to a Si-H vibrational line at 2184.3 cm-1. We show that this center also gives rise to additional weak Si-H and C-H lines at 2214.4 and 2826.9 cm-1 (4.2 K). When D is partially substituted for H, rich isotopic splittings of these IR lines are produced. An analysis of these data reveals that the 2184.3, 2214.4, and 2826.9 cm-1 lines are due to a VH4 defect bound to a substitutional C impurity, i.e., a VH3-HC center.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Nov 28 2011|