Microscopic structure of a VH4 center trapped by C in Si

Chao Peng, Haoxiang Zhang, Michael Stavola, W. Beall Fowler, Benjamin Esham, Stefan K. Estreicher, Andris Docaj, Lode Carnel, Mike Seacrist

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Abstract

The Si materials typically used to fabricate solar cells often contain high concentrations of carbon and hydrogen impurities. One of the more thermally stable defects in Si that contains both C and H gives rise to a Si-H vibrational line at 2184.3 cm-1. We show that this center also gives rise to additional weak Si-H and C-H lines at 2214.4 and 2826.9 cm-1 (4.2 K). When D is partially substituted for H, rich isotopic splittings of these IR lines are produced. An analysis of these data reveals that the 2184.3, 2214.4, and 2826.9 cm-1 lines are due to a VH4 defect bound to a substitutional C impurity, i.e., a VH3-HC center.

Original languageEnglish
Article number195205
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number19
DOIs
StatePublished - Nov 28 2011

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    Peng, C., Zhang, H., Stavola, M., Fowler, W. B., Esham, B., Estreicher, S. K., Docaj, A., Carnel, L., & Seacrist, M. (2011). Microscopic structure of a VH4 center trapped by C in Si. Physical Review B - Condensed Matter and Materials Physics, 84(19), [195205]. https://doi.org/10.1103/PhysRevB.84.195205