Mg and O codoping in p-type GaN and AlxGa1-xN (0<x<0.08)

G. Kipshidze; V. Kuryatkov; B. Borisov; Yu Kudryavtsev; R. Asomoza; S. Nikishin; H. Temkin

doi:10.1063/1.1471373

Mg and O codoping in p-type GaN and Al_xGa_1-xN (0<x<0.08)

G. Kipshidze, V. Kuryatkov, B. Borisov, Yu Kudryavtsev, R. Asomoza, S. Nikishin, H. Temkin

Electrical and Computer Engineering

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44 Scopus citations

Abstract

We describe Mg and O codoping experiments in gas-source molecular-beam epitaxy of GaN and AlGaN that produce high levels of Mg incorporation and activation. In order to obtain the highest level of Mg incorporation the surface stoichiometry was optimized by adjusting the NH₃/Ga and NH ₃/(Ga+Al) flux ratios. The lowest acceptor activation energy and the highest hole concentration, p=2×10¹⁸cm^-3, were measured in samples of p-GaN and p-Al_xGa_1-xN with well-defined Mg/O ratios determined by secondary ion mass spectrometry. Measurements of the temperature dependence of diffusion current in p-n junctions formed in Al_0.08Ga_0.92N and GaN show acceptor activation energy of 195±10 and 145±15meV, respectively. Low activation energies are attributed to successful codoping.

Original language	English
Pages (from-to)	2910-2912
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	16
DOIs	https://doi.org/10.1063/1.1471373
State	Published - Apr 22 2002

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title = "Mg and O codoping in p-type GaN and AlxGa1-xN (0<x<0.08)",

abstract = "We describe Mg and O codoping experiments in gas-source molecular-beam epitaxy of GaN and AlGaN that produce high levels of Mg incorporation and activation. In order to obtain the highest level of Mg incorporation the surface stoichiometry was optimized by adjusting the NH3/Ga and NH 3/(Ga+Al) flux ratios. The lowest acceptor activation energy and the highest hole concentration, p=2×1018cm-3, were measured in samples of p-GaN and p-AlxGa1-xN with well-defined Mg/O ratios determined by secondary ion mass spectrometry. Measurements of the temperature dependence of diffusion current in p-n junctions formed in Al0.08Ga0.92N and GaN show acceptor activation energy of 195±10 and 145±15meV, respectively. Low activation energies are attributed to successful codoping.",

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T1 - Mg and O codoping in p-type GaN and AlxGa1-xN (0<x<0.08)

AU - Kipshidze, G.

AU - Kuryatkov, V.

AU - Borisov, B.

AU - Kudryavtsev, Yu

AU - Asomoza, R.

AU - Nikishin, S.

AU - Temkin, H.

PY - 2002/4/22

Y1 - 2002/4/22

N2 - We describe Mg and O codoping experiments in gas-source molecular-beam epitaxy of GaN and AlGaN that produce high levels of Mg incorporation and activation. In order to obtain the highest level of Mg incorporation the surface stoichiometry was optimized by adjusting the NH3/Ga and NH 3/(Ga+Al) flux ratios. The lowest acceptor activation energy and the highest hole concentration, p=2×1018cm-3, were measured in samples of p-GaN and p-AlxGa1-xN with well-defined Mg/O ratios determined by secondary ion mass spectrometry. Measurements of the temperature dependence of diffusion current in p-n junctions formed in Al0.08Ga0.92N and GaN show acceptor activation energy of 195±10 and 145±15meV, respectively. Low activation energies are attributed to successful codoping.

AB - We describe Mg and O codoping experiments in gas-source molecular-beam epitaxy of GaN and AlGaN that produce high levels of Mg incorporation and activation. In order to obtain the highest level of Mg incorporation the surface stoichiometry was optimized by adjusting the NH3/Ga and NH 3/(Ga+Al) flux ratios. The lowest acceptor activation energy and the highest hole concentration, p=2×1018cm-3, were measured in samples of p-GaN and p-AlxGa1-xN with well-defined Mg/O ratios determined by secondary ion mass spectrometry. Measurements of the temperature dependence of diffusion current in p-n junctions formed in Al0.08Ga0.92N and GaN show acceptor activation energy of 195±10 and 145±15meV, respectively. Low activation energies are attributed to successful codoping.

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