Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

K. B. Nam; M. L. Nakarmi; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1594833

Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, H. X. Jiang

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Abstract

A study was performed on Mg acceptor level in AlN probed by deep ultraviolet photoluminescence. The epilayers were grown by using metalorganic chemical vapor deposition on sapphire substrates. To study the optical transitions in Mg-doped AlN epilayers, deep UV picosecond time-resolved photoluminescence (PL) spectroscopy technique was employed.

Original language	English
Pages (from-to)	878-880
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	5
DOIs	https://doi.org/10.1063/1.1594833
State	Published - Aug 4 2003

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title = "Mg acceptor level in AlN probed by deep ultraviolet photoluminescence",

abstract = "A study was performed on Mg acceptor level in AlN probed by deep ultraviolet photoluminescence. The epilayers were grown by using metalorganic chemical vapor deposition on sapphire substrates. To study the optical transitions in Mg-doped AlN epilayers, deep UV picosecond time-resolved photoluminescence (PL) spectroscopy technique was employed.",

author = "Nam, {K. B.} and Nakarmi, {M. L.} and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2003",

month = aug,

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doi = "10.1063/1.1594833",

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journal = "Applied Physics Letters",

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AU - Nam, K. B.

AU - Nakarmi, M. L.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2003/8/4

Y1 - 2003/8/4

N2 - A study was performed on Mg acceptor level in AlN probed by deep ultraviolet photoluminescence. The epilayers were grown by using metalorganic chemical vapor deposition on sapphire substrates. To study the optical transitions in Mg-doped AlN epilayers, deep UV picosecond time-resolved photoluminescence (PL) spectroscopy technique was employed.

AB - A study was performed on Mg acceptor level in AlN probed by deep ultraviolet photoluminescence. The epilayers were grown by using metalorganic chemical vapor deposition on sapphire substrates. To study the optical transitions in Mg-doped AlN epilayers, deep UV picosecond time-resolved photoluminescence (PL) spectroscopy technique was employed.

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U2 - 10.1063/1.1594833

DO - 10.1063/1.1594833

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VL - 83

SP - 878

EP - 880

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

Abstract

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