Abstract
A study was performed on Mg acceptor level in AlN probed by deep ultraviolet photoluminescence. The epilayers were grown by using metalorganic chemical vapor deposition on sapphire substrates. To study the optical transitions in Mg-doped AlN epilayers, deep UV picosecond time-resolved photoluminescence (PL) spectroscopy technique was employed.
Original language | English |
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Pages (from-to) | 878-880 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 5 |
DOIs | |
State | Published - Aug 4 2003 |