Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

198 Scopus citations

Abstract

A study was performed on Mg acceptor level in AlN probed by deep ultraviolet photoluminescence. The epilayers were grown by using metalorganic chemical vapor deposition on sapphire substrates. To study the optical transitions in Mg-doped AlN epilayers, deep UV picosecond time-resolved photoluminescence (PL) spectroscopy technique was employed.

Original languageEnglish
Pages (from-to)878-880
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number5
DOIs
StatePublished - Aug 4 2003

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