Metastability and persistent photoconductivity in Mg-doped p-type GaN

C. Johnson, J. Y. Lin, H. X. Jiang, M. Asif Khan, C. J. Sun

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Electrical properties of Mg-doped p-type GaN grown by metalorganic chemical vapor deposition have been investigated by Hall effect and conductivity measurements. Metastability and persistent photoconductivity effects have been observed in GaN. It was found that at low temperatures, it takes several hours for the free hole concentration to reach its equilibrium value in the dark as well as in the photoexcited state, implying a bistable nature of impurities in p-type GaN. Temperature dependence of these behaviors have been studied, from which the energy barrier for free hole capture by ionized impurities as well as between the metastable and the stable states of neutral impurities have been obtained.

Original languageEnglish
Pages (from-to)1808
Number of pages1
JournalApplied Physics Letters
StatePublished - 1995

Fingerprint Dive into the research topics of 'Metastability and persistent photoconductivity in Mg-doped p-type GaN'. Together they form a unique fingerprint.

Cite this