Metastability and persistent photoconductivity in Mg-doped p-type GaN

C. Johnson; J. Y. Lin; H. X. Jiang; M. Asif Khan; C. J. Sun

doi:10.1063/1.116020

Metastability and persistent photoconductivity in Mg-doped p-type GaN

C. Johnson, J. Y. Lin, H. X. Jiang, M. Asif Khan, C. J. Sun

Electrical and Computer Engineering

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Abstract

Electrical properties of Mg-doped p-type GaN grown by metalorganic chemical vapor deposition have been investigated by Hall effect and conductivity measurements. Metastability and persistent photoconductivity effects have been observed in GaN. It was found that at low temperatures, it takes several hours for the free hole concentration to reach its equilibrium value in the dark as well as in the photoexcited state, implying a bistable nature of impurities in p-type GaN. Temperature dependence of these behaviors have been studied, from which the energy barrier for free hole capture by ionized impurities as well as between the metastable and the stable states of neutral impurities have been obtained.

Original language	English
Pages (from-to)	1808-1810
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	13
DOIs	https://doi.org/10.1063/1.116020
State	Published - 1996

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abstract = "Electrical properties of Mg-doped p-type GaN grown by metalorganic chemical vapor deposition have been investigated by Hall effect and conductivity measurements. Metastability and persistent photoconductivity effects have been observed in GaN. It was found that at low temperatures, it takes several hours for the free hole concentration to reach its equilibrium value in the dark as well as in the photoexcited state, implying a bistable nature of impurities in p-type GaN. Temperature dependence of these behaviors have been studied, from which the energy barrier for free hole capture by ionized impurities as well as between the metastable and the stable states of neutral impurities have been obtained.",

author = "C. Johnson and Lin, {J. Y.} and Jiang, {H. X.} and Khan, {M. Asif} and Sun, {C. J.}",

year = "1996",

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language = "English",

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journal = "Applied Physics Letters",

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T1 - Metastability and persistent photoconductivity in Mg-doped p-type GaN

AU - Johnson, C.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Khan, M. Asif

AU - Sun, C. J.

PY - 1996

Y1 - 1996

N2 - Electrical properties of Mg-doped p-type GaN grown by metalorganic chemical vapor deposition have been investigated by Hall effect and conductivity measurements. Metastability and persistent photoconductivity effects have been observed in GaN. It was found that at low temperatures, it takes several hours for the free hole concentration to reach its equilibrium value in the dark as well as in the photoexcited state, implying a bistable nature of impurities in p-type GaN. Temperature dependence of these behaviors have been studied, from which the energy barrier for free hole capture by ionized impurities as well as between the metastable and the stable states of neutral impurities have been obtained.

AB - Electrical properties of Mg-doped p-type GaN grown by metalorganic chemical vapor deposition have been investigated by Hall effect and conductivity measurements. Metastability and persistent photoconductivity effects have been observed in GaN. It was found that at low temperatures, it takes several hours for the free hole concentration to reach its equilibrium value in the dark as well as in the photoexcited state, implying a bistable nature of impurities in p-type GaN. Temperature dependence of these behaviors have been studied, from which the energy barrier for free hole capture by ionized impurities as well as between the metastable and the stable states of neutral impurities have been obtained.

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VL - 68

SP - 1808

EP - 1810

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Metastability and persistent photoconductivity in Mg-doped p-type GaN

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