Metallization and Hall-effect of Mg2Ge under high pressure

Yuqiang Li, Yang Gao, Yonghao Han, Cailong Liu, Gang Peng, Qinglin Wang, Feng Ke, Yanzhang Ma, Chunxiao Gao

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The electrical transport properties of Mg2Ge under high pressure were studied with the in situ temperature-dependent resistivity and Hall-effect measurements. The theoretically predicted metallization of Mg2Ge was definitely found around 7.4-GPa by the temperature-dependent resistivity measurement. Other two pressure-induced structural phase transitions were also reflected by the measurements. Hall-effect measurement showed that the dominant charge carrier in the metallic Mg2Ge was hole, indicating the "bad metal" nature of Mg2Ge. The Hall mobility and charge carrier concentration results pointed out that the electrical transport behavior in the antifluorite phase was controlled by the increase quantity of drifting electrons under high pressure, but in both anticotunnite and Ni2In-type phases it was governed by the Hall mobility.

Original languageEnglish
Article number142103
JournalApplied Physics Letters
Volume107
Issue number14
DOIs
StatePublished - Oct 5 2015

Fingerprint

Dive into the research topics of 'Metallization and Hall-effect of Mg<sub>2</sub>Ge under high pressure'. Together they form a unique fingerprint.

Cite this