@inproceedings{1f65db60d23e4f91ae7f55f6c3eaac73,
title = "Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers",
abstract = "Hexagonal boron nitride (hBN) possesses extraordinary potential for solid-state neutron detector applications. This stems from the fact that the boron-10 (10B) isotope has a capture cross-section of 3840 barns for thermal neutrons that is orders of magnitude larger than other isotopes. Epitaxial layers of hBN have been synthesized by metal organic chemical vapor deposition (MOCVD). Experimental measurements indicated that the thermal neutron absorption coefficient and length of natural hBN epilayers are about 0.0036 μm-1 and 277 μm, respectively. To partially address the key requirement of long carrier lifetime and diffusion length for a solid-state neutron detector, micro-strip metal-semiconductor-metal detectors were fabricated and tested. A good current response was generated in these detectors using continuous irradiation with a thermal neutron beam, corresponding to an effective conversion efficiency approaching ∼80% for absorbed neutrons.",
keywords = "Epitaxial layers, MOCVD growth, Semiconducting hexagonal boron nitride, Solid-state neutron detectors",
author = "S. Majety and J. Li and Cao, {X. K.} and R. Dahal and Lin, {J. Y.} and Jiang, {H. X.}",
year = "2012",
doi = "10.1117/12.940748",
language = "English",
isbn = "9780819492241",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV",
note = "null ; Conference date: 13-08-2012 Through 15-08-2012",
}