Metal-insulator transition in semiconductor alloys probed by persistent photoconductivity

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Abstract

The metal-insulator transition (MIT) caused purely by alloy disorder in a Zn0.3Cd0.7Se semiconductor alloy has been probed by using persistent photoconductivity. Key parameters that describe the MIT, including the critical electron concentration nc and the energy tail states distribution parameter E0, have been determined experimentally. Our results, together with those obtained for impurity-doped and amorphous semiconductors, provide a complete picture of the MIT in different systems.

Original languageEnglish
Pages (from-to)4132-4136
Number of pages5
JournalPhysical Review B
Volume51
Issue number7
DOIs
StatePublished - 1995

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