Metal-insulator transition in semiconductor alloys probed by persistent photoconductivity

M. Smith; J. Y. Lin; H. X. Jiang

doi:10.1103/PhysRevB.51.4132

Metal-insulator transition in semiconductor alloys probed by persistent photoconductivity

M. Smith, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The metal-insulator transition (MIT) caused purely by alloy disorder in a Zn0.3Cd0.7Se semiconductor alloy has been probed by using persistent photoconductivity. Key parameters that describe the MIT, including the critical electron concentration nc and the energy tail states distribution parameter E0, have been determined experimentally. Our results, together with those obtained for impurity-doped and amorphous semiconductors, provide a complete picture of the MIT in different systems.

Original language	English
Pages (from-to)	4132-4136
Number of pages	5
Journal	Physical Review B
Volume	51
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.51.4132
State	Published - 1995

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title = "Metal-insulator transition in semiconductor alloys probed by persistent photoconductivity",

abstract = "The metal-insulator transition (MIT) caused purely by alloy disorder in a Zn0.3Cd0.7Se semiconductor alloy has been probed by using persistent photoconductivity. Key parameters that describe the MIT, including the critical electron concentration nc and the energy tail states distribution parameter E0, have been determined experimentally. Our results, together with those obtained for impurity-doped and amorphous semiconductors, provide a complete picture of the MIT in different systems.",

author = "M. Smith and Lin, {J. Y.} and Jiang, {H. X.}",

year = "1995",

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AU - Smith, M.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 1995

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N2 - The metal-insulator transition (MIT) caused purely by alloy disorder in a Zn0.3Cd0.7Se semiconductor alloy has been probed by using persistent photoconductivity. Key parameters that describe the MIT, including the critical electron concentration nc and the energy tail states distribution parameter E0, have been determined experimentally. Our results, together with those obtained for impurity-doped and amorphous semiconductors, provide a complete picture of the MIT in different systems.

AB - The metal-insulator transition (MIT) caused purely by alloy disorder in a Zn0.3Cd0.7Se semiconductor alloy has been probed by using persistent photoconductivity. Key parameters that describe the MIT, including the critical electron concentration nc and the energy tail states distribution parameter E0, have been determined experimentally. Our results, together with those obtained for impurity-doped and amorphous semiconductors, provide a complete picture of the MIT in different systems.

UR - http://www.scopus.com/inward/record.url?scp=0001594173&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.51.4132

DO - 10.1103/PhysRevB.51.4132

M3 - Article

AN - SCOPUS:0001594173

SN - 0163-1829

VL - 51

SP - 4132

EP - 4136

JO - Physical Review B

JF - Physical Review B

IS - 7

ER -

Metal-insulator transition in semiconductor alloys probed by persistent photoconductivity

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