Mechanisms of band-edge emission in Mg-doped p-type GaN

M. Smith; G. D. Chen; J. Y. Lin; H. X. Jiang; A. Salvador; B. N. Sverdlov; A. Botchkarev; H. Morkoc; B. Goldenberg

doi:10.1063/1.116282

Mechanisms of band-edge emission in Mg-doped p-type GaN

M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. N. Sverdlov, A. Botchkarev, H. Morkoc, B. Goldenberg

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

147 Scopus citations

Abstract

Time-resolved photoluminescence has been employed to study the mechanisms of band-edge emissions in Mg-doped p-type GaN. Two emission lines at about 290 and 550 meV below the band gap (Eg) have been observed. Their recombination lifetimes, dependencies on excitation intensity, and decay kinetics have demonstrated that the line at 290 meV below Eg is due to the conduction band-to-impurity transition involving shallow Mg impurities, while the line at 550 meV below Eg is due to the conduction band-to-impurity transition involving doping related deep-level centers (or complexes).

Original language	English
Pages (from-to)	1883-1885
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	14
DOIs	https://doi.org/10.1063/1.116282
State	Published - 1996

Access to Document

10.1063/1.116282

Cite this

@article{cec970ba4743477cb357093d8adb2e42,

title = "Mechanisms of band-edge emission in Mg-doped p-type GaN",

abstract = "Time-resolved photoluminescence has been employed to study the mechanisms of band-edge emissions in Mg-doped p-type GaN. Two emission lines at about 290 and 550 meV below the band gap (Eg) have been observed. Their recombination lifetimes, dependencies on excitation intensity, and decay kinetics have demonstrated that the line at 290 meV below Eg is due to the conduction band-to-impurity transition involving shallow Mg impurities, while the line at 550 meV below Eg is due to the conduction band-to-impurity transition involving doping related deep-level centers (or complexes).",

author = "M. Smith and Chen, {G. D.} and Lin, {J. Y.} and Jiang, {H. X.} and A. Salvador and Sverdlov, {B. N.} and A. Botchkarev and H. Morkoc and B. Goldenberg",

year = "1996",

doi = "10.1063/1.116282",

language = "English",

volume = "68",

pages = "1883--1885",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "14",

}

TY - JOUR

T1 - Mechanisms of band-edge emission in Mg-doped p-type GaN

AU - Smith, M.

AU - Chen, G. D.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Salvador, A.

AU - Sverdlov, B. N.

AU - Botchkarev, A.

AU - Morkoc, H.

AU - Goldenberg, B.

PY - 1996

Y1 - 1996

N2 - Time-resolved photoluminescence has been employed to study the mechanisms of band-edge emissions in Mg-doped p-type GaN. Two emission lines at about 290 and 550 meV below the band gap (Eg) have been observed. Their recombination lifetimes, dependencies on excitation intensity, and decay kinetics have demonstrated that the line at 290 meV below Eg is due to the conduction band-to-impurity transition involving shallow Mg impurities, while the line at 550 meV below Eg is due to the conduction band-to-impurity transition involving doping related deep-level centers (or complexes).

AB - Time-resolved photoluminescence has been employed to study the mechanisms of band-edge emissions in Mg-doped p-type GaN. Two emission lines at about 290 and 550 meV below the band gap (Eg) have been observed. Their recombination lifetimes, dependencies on excitation intensity, and decay kinetics have demonstrated that the line at 290 meV below Eg is due to the conduction band-to-impurity transition involving shallow Mg impurities, while the line at 550 meV below Eg is due to the conduction band-to-impurity transition involving doping related deep-level centers (or complexes).

UR - http://www.scopus.com/inward/record.url?scp=0030130308&partnerID=8YFLogxK

U2 - 10.1063/1.116282

DO - 10.1063/1.116282

M3 - Article

AN - SCOPUS:0030130308

SN - 0003-6951

VL - 68

SP - 1883

EP - 1885

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Mechanisms of band-edge emission in Mg-doped p-type GaN

Abstract

Access to Document

Other files and links

Fingerprint

Cite this