Mechanism of enhanced luminescence in InxAlyGa 1-x-yN quaternary alloys

C. H. Chen; L. Y. Huang; Y. F. Chen; H. X. Jiang; J. Y. Lin

doi:10.1063/1.1455147

Mechanism of enhanced luminescence in In_xAl_yGa _1-x-yN quaternary alloys

C. H. Chen, L. Y. Huang, Y. F. Chen, H. X. Jiang, J. Y. Lin

Electrical and Computer Engineering

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Abstract

We report a firm evidence of enhanced luminescence from InGaN-like clusters in In_xAl_yGa_1-x-yN quaternary alloys. Photoluminescence (PL) and Raman scattering measurements have been employed to study the optical properties of these alloys. The excellent correlation between the phonon replica structures accompanying luminescence line and the observed InGaN-related phonon modes in Raman spectra provide a powerful evidence showing that the existence of InGaN-like clusters is responsible for the enhanced luminescence in In_xAl_yGa_1-x-yN quaternary alloys. In addition, the dependence of the PL emission energy on temperature in the low-temperature regime and on excitation power density can also be explained consistently with recombination mechanisms involving the localized states attributed to InGaN-like cluster size fluctuations.

Original language	English
Pages (from-to)	1397-1399
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	8
DOIs	https://doi.org/10.1063/1.1455147
State	Published - Feb 25 2002

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title = "Mechanism of enhanced luminescence in InxAlyGa 1-x-yN quaternary alloys",

abstract = "We report a firm evidence of enhanced luminescence from InGaN-like clusters in InxAlyGa1-x-yN quaternary alloys. Photoluminescence (PL) and Raman scattering measurements have been employed to study the optical properties of these alloys. The excellent correlation between the phonon replica structures accompanying luminescence line and the observed InGaN-related phonon modes in Raman spectra provide a powerful evidence showing that the existence of InGaN-like clusters is responsible for the enhanced luminescence in InxAlyGa1-x-yN quaternary alloys. In addition, the dependence of the PL emission energy on temperature in the low-temperature regime and on excitation power density can also be explained consistently with recombination mechanisms involving the localized states attributed to InGaN-like cluster size fluctuations.",

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T1 - Mechanism of enhanced luminescence in InxAlyGa 1-x-yN quaternary alloys

AU - Chen, C. H.

AU - Huang, L. Y.

AU - Chen, Y. F.

AU - Jiang, H. X.

AU - Lin, J. Y.

PY - 2002/2/25

Y1 - 2002/2/25

N2 - We report a firm evidence of enhanced luminescence from InGaN-like clusters in InxAlyGa1-x-yN quaternary alloys. Photoluminescence (PL) and Raman scattering measurements have been employed to study the optical properties of these alloys. The excellent correlation between the phonon replica structures accompanying luminescence line and the observed InGaN-related phonon modes in Raman spectra provide a powerful evidence showing that the existence of InGaN-like clusters is responsible for the enhanced luminescence in InxAlyGa1-x-yN quaternary alloys. In addition, the dependence of the PL emission energy on temperature in the low-temperature regime and on excitation power density can also be explained consistently with recombination mechanisms involving the localized states attributed to InGaN-like cluster size fluctuations.

AB - We report a firm evidence of enhanced luminescence from InGaN-like clusters in InxAlyGa1-x-yN quaternary alloys. Photoluminescence (PL) and Raman scattering measurements have been employed to study the optical properties of these alloys. The excellent correlation between the phonon replica structures accompanying luminescence line and the observed InGaN-related phonon modes in Raman spectra provide a powerful evidence showing that the existence of InGaN-like clusters is responsible for the enhanced luminescence in InxAlyGa1-x-yN quaternary alloys. In addition, the dependence of the PL emission energy on temperature in the low-temperature regime and on excitation power density can also be explained consistently with recombination mechanisms involving the localized states attributed to InGaN-like cluster size fluctuations.

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Mechanism of enhanced luminescence in In_xAl_yGa _1-x-yN quaternary alloys

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