Mechanism of enhanced luminescence in In xAl yGa 1-x-yN quaternary epilayers

C. H. Chen; Y. F. Chen; Z. H. Lan; L. C. Chen; K. H. Chen; H. X. Jiang; J. Y. Lin

doi:10.1063/1.1650549

Mechanism of enhanced luminescence in In _xAl _yGa _1-x-yN quaternary epilayers

C. H. Chen, Y. F. Chen, Z. H. Lan, L. C. Chen, K. H. Chen, H. X. Jiang, J. Y. Lin

Electrical and Computer Engineering

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Abstract

The mechanism of enhanced luminescence in In _xAl _yGa _1-x-yN quaternary epilayers was discussed. To study the correlation between optical and structural properties in the alloy, photoluminescence, Raman scattering and field emission scanning electron microscopy (SEM) measurements were employed. The existence of InGaN-like nanostructure were established, which was responsible for the luminescence in Al alloy. Result shows a model system to demonstrate a defective alloy which exhibited a strong emission at room temperature.

Original language	English
Pages (from-to)	1480-1482
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	9
DOIs	https://doi.org/10.1063/1.1650549
State	Published - Mar 1 2004

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abstract = "The mechanism of enhanced luminescence in In xAl yGa 1-x-yN quaternary epilayers was discussed. To study the correlation between optical and structural properties in the alloy, photoluminescence, Raman scattering and field emission scanning electron microscopy (SEM) measurements were employed. The existence of InGaN-like nanostructure were established, which was responsible for the luminescence in Al alloy. Result shows a model system to demonstrate a defective alloy which exhibited a strong emission at room temperature.",

author = "Chen, {C. H.} and Chen, {Y. F.} and Lan, {Z. H.} and Chen, {L. C.} and Chen, {K. H.} and Jiang, {H. X.} and Lin, {J. Y.}",

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AU - Chen, C. H.

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AU - Lan, Z. H.

AU - Chen, L. C.

AU - Chen, K. H.

AU - Jiang, H. X.

AU - Lin, J. Y.

PY - 2004/3/1

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N2 - The mechanism of enhanced luminescence in In xAl yGa 1-x-yN quaternary epilayers was discussed. To study the correlation between optical and structural properties in the alloy, photoluminescence, Raman scattering and field emission scanning electron microscopy (SEM) measurements were employed. The existence of InGaN-like nanostructure were established, which was responsible for the luminescence in Al alloy. Result shows a model system to demonstrate a defective alloy which exhibited a strong emission at room temperature.

AB - The mechanism of enhanced luminescence in In xAl yGa 1-x-yN quaternary epilayers was discussed. To study the correlation between optical and structural properties in the alloy, photoluminescence, Raman scattering and field emission scanning electron microscopy (SEM) measurements were employed. The existence of InGaN-like nanostructure were established, which was responsible for the luminescence in Al alloy. Result shows a model system to demonstrate a defective alloy which exhibited a strong emission at room temperature.

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Mechanism of enhanced luminescence in In _xAl _yGa _1-x-yN quaternary epilayers

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