Mechanism of enhanced luminescence in In xAl yGa 1-x-yN quaternary epilayers

C. H. Chen, Y. F. Chen, Z. H. Lan, L. C. Chen, K. H. Chen, H. X. Jiang, J. Y. Lin

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Abstract

The mechanism of enhanced luminescence in In xAl yGa 1-x-yN quaternary epilayers was discussed. To study the correlation between optical and structural properties in the alloy, photoluminescence, Raman scattering and field emission scanning electron microscopy (SEM) measurements were employed. The existence of InGaN-like nanostructure were established, which was responsible for the luminescence in Al alloy. Result shows a model system to demonstrate a defective alloy which exhibited a strong emission at room temperature.

Original languageEnglish
Pages (from-to)1480-1482
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number9
DOIs
StatePublished - Mar 1 2004

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