Mechanism of carrier injection in (Ni/Au) /p -Alx Ga1-x N:Mg (0≤x<0.1) Ohmic contacts

S. Nikishin; I. Chary; B. Borisov; V. Kuryatkov; Yu Kudryavtsev; R. Asomoza; S. Yu Karpov; M. Holtz

doi:10.1063/1.3242420

Mechanism of carrier injection in (Ni/Au) /p -Al_x Ga1-x N:Mg (0≤x<0.1) Ohmic contacts

S. Nikishin, I. Chary, B. Borisov, V. Kuryatkov, Yu Kudryavtsev, R. Asomoza, S. Yu Karpov, M. Holtz

Electrical and Computer Engineering

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Abstract

We report the mechanism of current injection in (Ni/Au) /p -Al_x Ga1-x N:Mg (0≤x<0.1) Ohmic contacts based on the temperature dependence of hole concentrations (p) and specific contact resistance (ρ _c). The injection mechanism is found to be thermionic emission in all cases. A model is developed to describe the temperature dependences of p and ρ _c for Mg concentrations from 1019 to 1020 cm-3. The model takes into account splitting in the valence band structure, hole activation energy, and Schottky barrier height. For GaN (AlGaN) these are found to be 132-140 (135-150) meV and 66-88 (84-93) meV, respectively.

Original language	English
Article number	163502
Journal	Applied Physics Letters
Volume	95
Issue number	16
DOIs	https://doi.org/10.1063/1.3242420
State	Published - 2009

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title = "Mechanism of carrier injection in (Ni/Au) /p -Alx Ga1-x N:Mg (0≤x<0.1) Ohmic contacts",

abstract = "We report the mechanism of current injection in (Ni/Au) /p -Alx Ga1-x N:Mg (0≤x<0.1) Ohmic contacts based on the temperature dependence of hole concentrations (p) and specific contact resistance (ρ c). The injection mechanism is found to be thermionic emission in all cases. A model is developed to describe the temperature dependences of p and ρ c for Mg concentrations from 1019 to 1020 cm-3. The model takes into account splitting in the valence band structure, hole activation energy, and Schottky barrier height. For GaN (AlGaN) these are found to be 132-140 (135-150) meV and 66-88 (84-93) meV, respectively.",

author = "S. Nikishin and I. Chary and B. Borisov and V. Kuryatkov and Yu Kudryavtsev and R. Asomoza and Karpov, {S. Yu} and M. Holtz",

note = "Funding Information: Work at Texas Tech was supported by NSF (Contract No. ECS-0609416), Army CERDEC (Contract No. W15P7T-07-D-P040), and the J. F Maddox Foundation.",

year = "2009",

doi = "10.1063/1.3242420",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Mechanism of carrier injection in (Ni/Au) /p -Alx Ga1-x N:Mg (0≤x<0.1) Ohmic contacts

AU - Nikishin, S.

AU - Chary, I.

AU - Borisov, B.

AU - Kuryatkov, V.

AU - Kudryavtsev, Yu

AU - Asomoza, R.

AU - Karpov, S. Yu

AU - Holtz, M.

N1 - Funding Information: Work at Texas Tech was supported by NSF (Contract No. ECS-0609416), Army CERDEC (Contract No. W15P7T-07-D-P040), and the J. F Maddox Foundation.

PY - 2009

Y1 - 2009

N2 - We report the mechanism of current injection in (Ni/Au) /p -Alx Ga1-x N:Mg (0≤x<0.1) Ohmic contacts based on the temperature dependence of hole concentrations (p) and specific contact resistance (ρ c). The injection mechanism is found to be thermionic emission in all cases. A model is developed to describe the temperature dependences of p and ρ c for Mg concentrations from 1019 to 1020 cm-3. The model takes into account splitting in the valence band structure, hole activation energy, and Schottky barrier height. For GaN (AlGaN) these are found to be 132-140 (135-150) meV and 66-88 (84-93) meV, respectively.

AB - We report the mechanism of current injection in (Ni/Au) /p -Alx Ga1-x N:Mg (0≤x<0.1) Ohmic contacts based on the temperature dependence of hole concentrations (p) and specific contact resistance (ρ c). The injection mechanism is found to be thermionic emission in all cases. A model is developed to describe the temperature dependences of p and ρ c for Mg concentrations from 1019 to 1020 cm-3. The model takes into account splitting in the valence band structure, hole activation energy, and Schottky barrier height. For GaN (AlGaN) these are found to be 132-140 (135-150) meV and 66-88 (84-93) meV, respectively.

UR - http://www.scopus.com/inward/record.url?scp=70350423017&partnerID=8YFLogxK

U2 - 10.1063/1.3242420

DO - 10.1063/1.3242420

M3 - Article

AN - SCOPUS:70350423017

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 163502

ER -

Mechanism of carrier injection in (Ni/Au) /p -Al_x Ga1-x N:Mg (0≤x<0.1) Ohmic contacts

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