Mechanism of carrier injection in (Ni/Au) /p -Alx Ga1-x N:Mg (0≤x<0.1) Ohmic contacts

S. Nikishin, I. Chary, B. Borisov, V. Kuryatkov, Yu Kudryavtsev, R. Asomoza, S. Yu Karpov, M. Holtz

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We report the mechanism of current injection in (Ni/Au) /p -Alx Ga1-x N:Mg (0≤x<0.1) Ohmic contacts based on the temperature dependence of hole concentrations (p) and specific contact resistance (ρ c). The injection mechanism is found to be thermionic emission in all cases. A model is developed to describe the temperature dependences of p and ρ c for Mg concentrations from 1019 to 1020 cm-3. The model takes into account splitting in the valence band structure, hole activation energy, and Schottky barrier height. For GaN (AlGaN) these are found to be 132-140 (135-150) meV and 66-88 (84-93) meV, respectively.

Original languageEnglish
Article number163502
JournalApplied Physics Letters
Volume95
Issue number16
DOIs
StatePublished - 2009

Fingerprint Dive into the research topics of 'Mechanism of carrier injection in (Ni/Au) /p -Al<sub>x</sub> Ga1-x N:Mg (0≤x<0.1) Ohmic contacts'. Together they form a unique fingerprint.

  • Cite this

    Nikishin, S., Chary, I., Borisov, B., Kuryatkov, V., Kudryavtsev, Y., Asomoza, R., Karpov, S. Y., & Holtz, M. (2009). Mechanism of carrier injection in (Ni/Au) /p -Alx Ga1-x N:Mg (0≤x<0.1) Ohmic contacts. Applied Physics Letters, 95(16), [163502]. https://doi.org/10.1063/1.3242420