MBE growth and ultrahigh temperature processing of high-quality AlN films

Z. Y. Fan, G. Rong, N. Newman, David J. Smith, D. Chandrasekhar

Research output: Contribution to journalConference article

Abstract

Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150 °C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350 °C) produces high-quality AlN thin-films with narrow rocking curve widths (<2 arcmin) and low dislocation densities (< approximately 3×108 cm-2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.

Original languageEnglish
Pages (from-to)O7.2.1-O7.2.6
JournalMaterials Research Society Symposium - Proceedings
Volume587
StatePublished - 2000
EventSubstrate Engineering Paving the Way to Epitaxy - Boston, MA, USA
Duration: Nov 29 1999Dec 3 1999

Fingerprint Dive into the research topics of 'MBE growth and ultrahigh temperature processing of high-quality AlN films'. Together they form a unique fingerprint.

  • Cite this

    Fan, Z. Y., Rong, G., Newman, N., Smith, D. J., & Chandrasekhar, D. (2000). MBE growth and ultrahigh temperature processing of high-quality AlN films. Materials Research Society Symposium - Proceedings, 587, O7.2.1-O7.2.6.