TY - JOUR
T1 - MBE growth and ultrahigh temperature processing of high-quality AlN films
AU - Fan, Z. Y.
AU - Rong, G.
AU - Newman, N.
AU - Smith, David J.
AU - Chandrasekhar, D.
N1 - Funding Information:
The authors thank Dr. Colin Wood for his encouragement and support. This work was supported by the Office of Naval Research (Contract No. N00014-96-1-1002). We acknowledge use of facilities at the Center for High Resolution Electron Microscopy at Arizona State University.
PY - 2000
Y1 - 2000
N2 - Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150 °C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350 °C) produces high-quality AlN thin-films with narrow rocking curve widths (<2 arcmin) and low dislocation densities (< approximately 3×108 cm-2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.
AB - Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150 °C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350 °C) produces high-quality AlN thin-films with narrow rocking curve widths (<2 arcmin) and low dislocation densities (< approximately 3×108 cm-2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.
UR - http://www.scopus.com/inward/record.url?scp=0034496905&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0034496905
SN - 0272-9172
VL - 587
SP - O7.2.1-O7.2.6
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Substrate Engineering Paving the Way to Epitaxy
Y2 - 29 November 1999 through 3 December 1999
ER -