MBE growth and ultrahigh temperature processing of high-quality AlN films

Z. Y. Fan; G. Rong; N. Newman; David J. Smith; D. Chandrasekhar

MBE growth and ultrahigh temperature processing of high-quality AlN films

Z. Y. Fan, G. Rong, N. Newman, David J. Smith, D. Chandrasekhar

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150°C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350°C) produces high-quality AlN thin-films with narrow rocking curve widths (<2 arcmin) and low dislocation densities (<∼3×10⁸ cm^-2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.

Original language	English
Pages (from-to)	07.2.1-07.2.6
Journal	Materials Research Society Symposium - Proceedings
Volume	587
State	Published - 2000

Cite this

@article{e0677cf314974a95b40128a9de0093af,

title = "MBE growth and ultrahigh temperature processing of high-quality AlN films",

abstract = "Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150°C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350°C) produces high-quality AlN thin-films with narrow rocking curve widths (<2 arcmin) and low dislocation densities (<∼3×108 cm-2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.",

author = "Fan, {Z. Y.} and G. Rong and N. Newman and Smith, {David J.} and D. Chandrasekhar",

note = "Funding Information: The authors thank Dr. Colin Wood for his encouragement and support. This work was supported by the Office of Naval Research (Contract No. N00014-96-1-1002). We acknowledge use of facilities at the Center for High Resolution Electron Microscopy at Arizona State University.",

year = "2000",

language = "English",

volume = "587",

pages = "07.2.1--07.2.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

}

TY - JOUR

T1 - MBE growth and ultrahigh temperature processing of high-quality AlN films

AU - Fan, Z. Y.

AU - Rong, G.

AU - Newman, N.

AU - Smith, David J.

AU - Chandrasekhar, D.

N1 - Funding Information: The authors thank Dr. Colin Wood for his encouragement and support. This work was supported by the Office of Naval Research (Contract No. N00014-96-1-1002). We acknowledge use of facilities at the Center for High Resolution Electron Microscopy at Arizona State University.

PY - 2000

Y1 - 2000

N2 - Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150°C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350°C) produces high-quality AlN thin-films with narrow rocking curve widths (<2 arcmin) and low dislocation densities (<∼3×108 cm-2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.

AB - Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150°C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350°C) produces high-quality AlN thin-films with narrow rocking curve widths (<2 arcmin) and low dislocation densities (<∼3×108 cm-2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.

UR - http://www.scopus.com/inward/record.url?scp=33750904628&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33750904628

SN - 0272-9172

VL - 587

SP - 07.2.1-07.2.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

MBE growth and ultrahigh temperature processing of high-quality AlN films

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