MBE growth and characterization of δ-doping in GaAs and GaAs/Si

P. Basmaji, A. M. Ceschin, M. Siu Li, O. Hipólito, A. A. Bernussi, F. IIkawa, P. Motisuke

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

We have investigated the δ-doped GaAs with different cap layer thickness, donor concentrations and intensities of pumping light grown by molecular beam epitaxy, using photoreflectance spectroscopy. The spectra show transitions that we assigned to confined electronic states in the potential of the δ-doping. These electronic state levels depend strongly on the cap layer thickness.

Original languageEnglish
Pages (from-to)356-358
Number of pages3
JournalSurface Science
Volume228
Issue number1-3
DOIs
StatePublished - Apr 1 1990

Fingerprint Dive into the research topics of 'MBE growth and characterization of δ-doping in GaAs and GaAs/Si'. Together they form a unique fingerprint.

  • Cite this

    Basmaji, P., Ceschin, A. M., Siu Li, M., Hipólito, O., Bernussi, A. A., IIkawa, F., & Motisuke, P. (1990). MBE growth and characterization of δ-doping in GaAs and GaAs/Si. Surface Science, 228(1-3), 356-358. https://doi.org/10.1016/0039-6028(90)90327-5