MBE growth and characterization of δ-doping in GaAs and GaAs/Si

P. Basmaji, A. M. Ceschin, M. Siu Li, O. Hipólito, A. A. Bernussi, F. IIkawa, P. Motisuke

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We have investigated the δ-doped GaAs with different cap layer thickness, donor concentrations and intensities of pumping light grown by molecular beam epitaxy, using photoreflectance spectroscopy. The spectra show transitions that we assigned to confined electronic states in the potential of the δ-doping. These electronic state levels depend strongly on the cap layer thickness.

Original languageEnglish
Pages (from-to)356-358
Number of pages3
JournalSurface Science
Issue number1-3
StatePublished - Apr 1 1990


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