TY - JOUR
T1 - Material properties of GaN in the context of electron devices
AU - Morkoç, H.
AU - Cingolani, R.
AU - Lambrecht, W.
AU - Gil, B.
AU - Jiang, H. X.
AU - Lin, J.
AU - Pavlidis, D.
AU - Shenai, K.
PY - 1999
Y1 - 1999
N2 - Wide bandgap nitride semiconductors have recently attracted a great level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters and detectors. However, this material system with its favorable heterojunctions and transport properties began to produce very respectable power levels in microwave amplifiers. If and when the breakdown fields achieved experimentally approaches the predicted values, this material system may also be very attractive for switching power devices. In addition to the premature breakdown, a number of scientific challenges remain including a clear experimental investigation of polarization effects. In this paper, transport properties as pertained to electronic devices and potential switching devices, and polarization effects will be treated.
AB - Wide bandgap nitride semiconductors have recently attracted a great level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters and detectors. However, this material system with its favorable heterojunctions and transport properties began to produce very respectable power levels in microwave amplifiers. If and when the breakdown fields achieved experimentally approaches the predicted values, this material system may also be very attractive for switching power devices. In addition to the premature breakdown, a number of scientific challenges remain including a clear experimental investigation of polarization effects. In this paper, transport properties as pertained to electronic devices and potential switching devices, and polarization effects will be treated.
UR - http://www.scopus.com/inward/record.url?scp=3442900904&partnerID=8YFLogxK
U2 - 10.1557/s1092578300002209
DO - 10.1557/s1092578300002209
M3 - Article
AN - SCOPUS:3442900904
SN - 1092-5783
VL - 4
JO - MRS Internet Journal of Nitride Semiconductor Research
JF - MRS Internet Journal of Nitride Semiconductor Research
IS - SUPPL. 1
ER -