Material properties of GaN in the context of electron devices

H. Morkoç, R. Cingolani, W. Lambrecht, B. Gil, H. X. Jiang, J. Lin, D. Pavlidis, K. Shenai

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

Wide bandgap nitride semiconductors have recently attracted a great level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters and detectors. However, this material system with its favorable heterojunctions and transport properties began to produce very respectable power levels in microwave amplifiers. If and when the breakdown fields achieved experimentally approaches the predicted values, this material system may also be very attractive for switching power devices. In addition to the premature breakdown, a number of scientific challenges remain including a clear experimental investigation of polarization effects. In this paper, transport properties as pertained to electronic devices and potential switching devices, and polarization effects will be treated.

Original languageEnglish
Pages (from-to)G1.2
JournalMaterials Research Society Symposium - Proceedings
Volume537
StatePublished - 1999
EventProceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA
Duration: Nov 30 1998Dec 4 1998

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