Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods

X. H. Ji; S. P. Lau; S. F. Yu; T. S. Herng; H. Y. Yang; S. Y. Tang; A. Sedhain; J. Y. Lin; H. X. Jiang

doi:10.1109/INEC.2008.4585470

Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods

X. H. Ji, S. P. Lau, S. F. Yu, T. S. Herng, H. Y. Yang, S. Y. Tang, A. Sedhain, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The undoped and transition metal (TM) -doped AlN (AlN:Cu and AlN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AlN nanorods exhibited strong oxygen-related impurity emission at ∼3.25 eV. However, AlN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe³⁺-related and band-edge emission, respectively. Both the Cu and Fe-doped AlN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AlN:Cu and AlN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm³ at room temperature, respectively. The Fe-doped AlN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AlN nanorods.

Original language	English
Title of host publication	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages	206-209
Number of pages	4
DOIs	https://doi.org/10.1109/INEC.2008.4585470
State	Published - 2008
Event	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China Duration: Mar 24 2008 → Mar 27 2008

Publication series

Name	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Conference

Conference	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Country/Territory	China
City	Shanghai
Period	03/24/08 → 03/27/08

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10.1109/INEC.2008.4585470

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Ji, X. H., Lau, S. P., Yu, S. F., Herng, T. S., Yang, H. Y., Tang, S. Y., Sedhain, A., Lin, J. Y., & Jiang, H. X. (2008). Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods. In 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 (pp. 206-209). Article 4585470 (2008 2nd IEEE International Nanoelectronics Conference, INEC 2008). https://doi.org/10.1109/INEC.2008.4585470

@inproceedings{ee67951f606d4625ba4981a2f60a5c5a,

title = "Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods",

abstract = "The undoped and transition metal (TM) -doped AlN (AlN:Cu and AlN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AlN nanorods exhibited strong oxygen-related impurity emission at ∼3.25 eV. However, AlN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe3+-related and band-edge emission, respectively. Both the Cu and Fe-doped AlN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AlN:Cu and AlN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm3 at room temperature, respectively. The Fe-doped AlN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AlN nanorods.",

author = "Ji, {X. H.} and Lau, {S. P.} and Yu, {S. F.} and Herng, {T. S.} and Yang, {H. Y.} and Tang, {S. Y.} and A. Sedhain and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2008",

doi = "10.1109/INEC.2008.4585470",

language = "English",

isbn = "9781424415731",

series = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

pages = "206--209",

booktitle = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

note = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 ; Conference date: 24-03-2008 Through 27-03-2008",

}

Ji, XH, Lau, SP, Yu, SF, Herng, TS, Yang, HY, Tang, SY, Sedhain, A, Lin, JY & Jiang, HX 2008, Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods. in 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008., 4585470, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, pp. 206-209, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, Shanghai, China, 03/24/08. https://doi.org/10.1109/INEC.2008.4585470

Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods. / Ji, X. H.; Lau, S. P.; Yu, S. F. et al.
2008 2nd IEEE International Nanoelectronics Conference, INEC 2008. 2008. p. 206-209 4585470 (2008 2nd IEEE International Nanoelectronics Conference, INEC 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods

AU - Ji, X. H.

AU - Lau, S. P.

AU - Yu, S. F.

AU - Herng, T. S.

AU - Yang, H. Y.

AU - Tang, S. Y.

AU - Sedhain, A.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2008

Y1 - 2008

N2 - The undoped and transition metal (TM) -doped AlN (AlN:Cu and AlN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AlN nanorods exhibited strong oxygen-related impurity emission at ∼3.25 eV. However, AlN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe3+-related and band-edge emission, respectively. Both the Cu and Fe-doped AlN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AlN:Cu and AlN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm3 at room temperature, respectively. The Fe-doped AlN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AlN nanorods.

AB - The undoped and transition metal (TM) -doped AlN (AlN:Cu and AlN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AlN nanorods exhibited strong oxygen-related impurity emission at ∼3.25 eV. However, AlN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe3+-related and band-edge emission, respectively. Both the Cu and Fe-doped AlN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AlN:Cu and AlN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm3 at room temperature, respectively. The Fe-doped AlN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AlN nanorods.

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U2 - 10.1109/INEC.2008.4585470

DO - 10.1109/INEC.2008.4585470

M3 - Conference contribution

AN - SCOPUS:52649142169

SN - 9781424415731

T3 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

SP - 206

EP - 209

BT - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

T2 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Y2 - 24 March 2008 through 27 March 2008

ER -

Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods

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