Magnetic doping of III-V nitrides and novel room temperature sensing applications

J. M. Zavada; R. M. Frazier; C. R. Abernathy; S. J. Pearton; J. Kelly; R. Rairigh; A. F. Hebard; J. Y. Lin; H. X. Jiang

Magnetic doping of III-V nitrides and novel room temperature sensing applications

J. M. Zavada, R. M. Frazier, C. R. Abernathy, S. J. Pearton, J. Kelly, R. Rairigh, A. F. Hebard, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

In this paper, we discuss aspects of ion implantation of magnetic elements into III-V nitride epilayers. In particular, recent data concerning the optical and magnetic characterization of AIN thin films implanted with Mn, Co, and Cr ions are presented. Extension of these studies to form practical spintronic devices is discussed. Based on these results, a novel concept for room temperature sensing of chemical and biological agents is put forward. This concept provides a method for achieving high sensitivity and high specificity in micro-sensor arrays.

Original language	English
Pages	327-337
Number of pages	11
State	Published - 2003
Event	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States Duration: Oct 12 2003 → Oct 17 2003

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
Country/Territory	United States
City	Orlando,FL
Period	10/12/03 → 10/17/03

Cite this

Zavada, J. M., Frazier, R. M., Abernathy, C. R., Pearton, S. J., Kelly, J., Rairigh, R., Hebard, A. F., Lin, J. Y., & Jiang, H. X. (2003). Magnetic doping of III-V nitrides and novel room temperature sensing applications. 327-337. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Zavada, J. M. ; Frazier, R. M. ; Abernathy, C. R. et al. / Magnetic doping of III-V nitrides and novel room temperature sensing applications. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.11 p.

@conference{fee8feee2761462eb7c11e629e2c28b4,

title = "Magnetic doping of III-V nitrides and novel room temperature sensing applications",

abstract = "In this paper, we discuss aspects of ion implantation of magnetic elements into III-V nitride epilayers. In particular, recent data concerning the optical and magnetic characterization of AIN thin films implanted with Mn, Co, and Cr ions are presented. Extension of these studies to form practical spintronic devices is discussed. Based on these results, a novel concept for room temperature sensing of chemical and biological agents is put forward. This concept provides a method for achieving high sensitivity and high specificity in micro-sensor arrays.",

author = "Zavada, {J. M.} and Frazier, {R. M.} and Abernathy, {C. R.} and Pearton, {S. J.} and J. Kelly and R. Rairigh and Hebard, {A. F.} and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2003",

language = "English",

pages = "327--337",

note = "State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

}

Zavada, JM, Frazier, RM, Abernathy, CR, Pearton, SJ, Kelly, J, Rairigh, R, Hebard, AF, Lin, JY & Jiang, HX 2003, 'Magnetic doping of III-V nitrides and novel room temperature sensing applications', Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 10/12/03 - 10/17/03 pp. 327-337.

Magnetic doping of III-V nitrides and novel room temperature sensing applications. / Zavada, J. M.; Frazier, R. M.; Abernathy, C. R. et al.
2003. 327-337 Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Magnetic doping of III-V nitrides and novel room temperature sensing applications

AU - Zavada, J. M.

AU - Frazier, R. M.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Kelly, J.

AU - Rairigh, R.

AU - Hebard, A. F.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2003

Y1 - 2003

N2 - In this paper, we discuss aspects of ion implantation of magnetic elements into III-V nitride epilayers. In particular, recent data concerning the optical and magnetic characterization of AIN thin films implanted with Mn, Co, and Cr ions are presented. Extension of these studies to form practical spintronic devices is discussed. Based on these results, a novel concept for room temperature sensing of chemical and biological agents is put forward. This concept provides a method for achieving high sensitivity and high specificity in micro-sensor arrays.

AB - In this paper, we discuss aspects of ion implantation of magnetic elements into III-V nitride epilayers. In particular, recent data concerning the optical and magnetic characterization of AIN thin films implanted with Mn, Co, and Cr ions are presented. Extension of these studies to form practical spintronic devices is discussed. Based on these results, a novel concept for room temperature sensing of chemical and biological agents is put forward. This concept provides a method for achieving high sensitivity and high specificity in micro-sensor arrays.

UR - http://www.scopus.com/inward/record.url?scp=5744252465&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:5744252465

SP - 327

EP - 337

T2 - State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium

Y2 - 12 October 2003 through 17 October 2003

ER -

Zavada JM, Frazier RM, Abernathy CR, Pearton SJ, Kelly J, Rairigh R et al.. Magnetic doping of III-V nitrides and novel room temperature sensing applications. 2003. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Magnetic doping of III-V nitrides and novel room temperature sensing applications

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