Magnetic doping of III-V nitrides and novel room temperature sensing applications

J. M. Zavada, R. M. Frazier, C. R. Abernathy, S. J. Pearton, J. Kelly, R. Rairigh, A. F. Hebard, J. Y. Lin, H. X. Jiang

Research output: Contribution to conferencePaper

2 Scopus citations

Abstract

In this paper, we discuss aspects of ion implantation of magnetic elements into III-V nitride epilayers. In particular, recent data concerning the optical and magnetic characterization of AIN thin films implanted with Mn, Co, and Cr ions are presented. Extension of these studies to form practical spintronic devices is discussed. Based on these results, a novel concept for room temperature sensing of chemical and biological agents is put forward. This concept provides a method for achieving high sensitivity and high specificity in micro-sensor arrays.

Original languageEnglish
Pages327-337
Number of pages11
StatePublished - 2003
EventState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States
Duration: Oct 12 2003Oct 17 2003

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
CountryUnited States
CityOrlando,FL
Period10/12/0310/17/03

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    Zavada, J. M., Frazier, R. M., Abernathy, C. R., Pearton, S. J., Kelly, J., Rairigh, R., Hebard, A. F., Lin, J. Y., & Jiang, H. X. (2003). Magnetic doping of III-V nitrides and novel room temperature sensing applications. 327-337. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.