Luminescence properties of AlxGa1-xN(0.4 < x < 0.5)/AlyGa1-yN (0.6 < y ≤ 1) quantum structures grown by gas source molecular beam epitaxy

S. Nikishin, B. Borisov, V. Kuryatkov, D. Song, M. Holtz, G. A. Garrett, W. L. Sarney, A. V. Sampath, H. Shen, M. Wraback

Research output: Contribution to journalConference article

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Abstract

We report structural and optical properties of AlxGa 1-xN (0.4 < x < 0.5)/AlyGa1-yN (0.6 < y ≤ 1) quantum structures grown by gas source molecular beam epitaxy with ammonia on (0001) sapphire substrates. The structures are designed for light emission at ∼ 280 nm. The AlxGa1-xN (0.4 < x < 0.5) well material was grown under two dimensional (2D), three dimensional (3D), and (2D+3D) conditions by the varying group-III/ammonia ratio. The formation of nanoscale islands, or quantum dots (QDs), in the wells grown in 3D and (2D+3D) modes was observed using transmission electron microscopy. Optical properties are investigated using room temperature cathodoluminescence and time-resolved photoluminescence. Systematic studies allow us to obtain well growth conditions to produce ∼ 60 fold intensity enhancement over purely two-dimensional structures. Under these conditions, corresponding to deposition ∼ 10 monolayers of well material, we obtain emission at ∼ 280 nm with narrowest line width and longest photoluminescence decay time.

Original languageEnglish
Pages (from-to)1852-1854
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
StatePublished - 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: Sep 16 2007Sep 21 2007

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