Luminescence of GaN/GaAs(111) B grown by molecular beam epitaxy with hydrazine

S. A. Nikishin; V. G. Antipov; A. I. Guriev; V. A. Elyukhin; N. N. Faleev; Yu A. Kudriavtsev; A. B. Lebedev; T. V. Shubina; A. S. Zubrilov; H. Temkin

doi:10.1116/1.590002

Luminescence of GaN/GaAs(111) B grown by molecular beam epitaxy with hydrazine

S. A. Nikishin, V. G. Antipov, A. I. Guriev, V. A. Elyukhin, N. N. Faleev, Yu A. Kudriavtsev, A. B. Lebedev, T. V. Shubina, A. S. Zubrilov, H. Temkin

Electrical and Computer Engineering

Research output: Contribution to journal › Article

4 Scopus citations

Abstract

Hexagonal GaN layers were grown on (111) B GaAs substrates by gas-source molecular beam epitaxy using hydrazine as a source of nitrogen. A smooth and abrupt AIN/GaAs interface was prepared by nitridation of an A1As buffer layer grown on clean GaAs(111) B surface. This buffer layer is stable at growth temperatures above 700 °C. The A1N layer prepared on this buffer exhibits two-dimensional growth. The subsequent GaN and GaInN layers show a quasi-two-dimensional growth. The photo-and cathodoluminescence spectra of these samples show a narrow (∼160 meV) band-edge emission and the absence of the "yellow" defect band. Further narrowing (∼20 meV) of the edge emission in unintentionally In-doped GaN is ascribed to the presence of confined domains of Ga_1-xIn_xN.

Original language	English
Pages (from-to)	1289-1292
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	3
DOIs	https://doi.org/10.1116/1.590002
State	Published - 1998

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Nikishin, S. A., Antipov, V. G., Guriev, A. I., Elyukhin, V. A., Faleev, N. N., Kudriavtsev, Y. A., Lebedev, A. B., Shubina, T. V., Zubrilov, A. S., & Temkin, H. (1998). Luminescence of GaN/GaAs(111) B grown by molecular beam epitaxy with hydrazine. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16(3), 1289-1292. https://doi.org/10.1116/1.590002

Nikishin, S. A. ; Antipov, V. G. ; Guriev, A. I. ; Elyukhin, V. A. ; Faleev, N. N. ; Kudriavtsev, Yu A. ; Lebedev, A. B. ; Shubina, T. V. ; Zubrilov, A. S. ; Temkin, H. / Luminescence of GaN/GaAs(111) B grown by molecular beam epitaxy with hydrazine. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1998 ; Vol. 16, No. 3. pp. 1289-1292.

@article{20645e4aa9df47bf85d8d27af5e77138,

title = "Luminescence of GaN/GaAs(111) B grown by molecular beam epitaxy with hydrazine",

abstract = "Hexagonal GaN layers were grown on (111) B GaAs substrates by gas-source molecular beam epitaxy using hydrazine as a source of nitrogen. A smooth and abrupt AIN/GaAs interface was prepared by nitridation of an A1As buffer layer grown on clean GaAs(111) B surface. This buffer layer is stable at growth temperatures above 700 °C. The A1N layer prepared on this buffer exhibits two-dimensional growth. The subsequent GaN and GaInN layers show a quasi-two-dimensional growth. The photo-and cathodoluminescence spectra of these samples show a narrow (∼160 meV) band-edge emission and the absence of the {"}yellow{"} defect band. Further narrowing (∼20 meV) of the edge emission in unintentionally In-doped GaN is ascribed to the presence of confined domains of Ga1-xInxN.",

author = "Nikishin, {S. A.} and Antipov, {V. G.} and Guriev, {A. I.} and Elyukhin, {V. A.} and Faleev, {N. N.} and Kudriavtsev, {Yu A.} and Lebedev, {A. B.} and Shubina, {T. V.} and Zubrilov, {A. S.} and H. Temkin",

year = "1998",

doi = "10.1116/1.590002",

language = "English",

volume = "16",

pages = "1289--1292",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "3",

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Nikishin, SA, Antipov, VG, Guriev, AI, Elyukhin, VA, Faleev, NN, Kudriavtsev, YA, Lebedev, AB, Shubina, TV, Zubrilov, AS & Temkin, H 1998, 'Luminescence of GaN/GaAs(111) B grown by molecular beam epitaxy with hydrazine', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 16, no. 3, pp. 1289-1292. https://doi.org/10.1116/1.590002

Luminescence of GaN/GaAs(111) B grown by molecular beam epitaxy with hydrazine. / Nikishin, S. A.; Antipov, V. G.; Guriev, A. I.; Elyukhin, V. A.; Faleev, N. N.; Kudriavtsev, Yu A.; Lebedev, A. B.; Shubina, T. V.; Zubrilov, A. S.; Temkin, H.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3, 1998, p. 1289-1292.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Luminescence of GaN/GaAs(111) B grown by molecular beam epitaxy with hydrazine

AU - Nikishin, S. A.

AU - Antipov, V. G.

AU - Guriev, A. I.

AU - Elyukhin, V. A.

AU - Faleev, N. N.

AU - Kudriavtsev, Yu A.

AU - Lebedev, A. B.

AU - Shubina, T. V.

AU - Zubrilov, A. S.

AU - Temkin, H.

PY - 1998

Y1 - 1998

N2 - Hexagonal GaN layers were grown on (111) B GaAs substrates by gas-source molecular beam epitaxy using hydrazine as a source of nitrogen. A smooth and abrupt AIN/GaAs interface was prepared by nitridation of an A1As buffer layer grown on clean GaAs(111) B surface. This buffer layer is stable at growth temperatures above 700 °C. The A1N layer prepared on this buffer exhibits two-dimensional growth. The subsequent GaN and GaInN layers show a quasi-two-dimensional growth. The photo-and cathodoluminescence spectra of these samples show a narrow (∼160 meV) band-edge emission and the absence of the "yellow" defect band. Further narrowing (∼20 meV) of the edge emission in unintentionally In-doped GaN is ascribed to the presence of confined domains of Ga1-xInxN.

AB - Hexagonal GaN layers were grown on (111) B GaAs substrates by gas-source molecular beam epitaxy using hydrazine as a source of nitrogen. A smooth and abrupt AIN/GaAs interface was prepared by nitridation of an A1As buffer layer grown on clean GaAs(111) B surface. This buffer layer is stable at growth temperatures above 700 °C. The A1N layer prepared on this buffer exhibits two-dimensional growth. The subsequent GaN and GaInN layers show a quasi-two-dimensional growth. The photo-and cathodoluminescence spectra of these samples show a narrow (∼160 meV) band-edge emission and the absence of the "yellow" defect band. Further narrowing (∼20 meV) of the edge emission in unintentionally In-doped GaN is ascribed to the presence of confined domains of Ga1-xInxN.

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