Hexagonal GaN layers were grown on (111) B GaAs substrates by gas-source molecular beam epitaxy using hydrazine as a source of nitrogen. A smooth and abrupt AIN/GaAs interface was prepared by nitridation of an A1As buffer layer grown on clean GaAs(111) B surface. This buffer layer is stable at growth temperatures above 700 °C. The A1N layer prepared on this buffer exhibits two-dimensional growth. The subsequent GaN and GaInN layers show a quasi-two-dimensional growth. The photo-and cathodoluminescence spectra of these samples show a narrow (∼160 meV) band-edge emission and the absence of the "yellow" defect band. Further narrowing (∼20 meV) of the edge emission in unintentionally In-doped GaN is ascribed to the presence of confined domains of Ga1-xInxN.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1998|