Luminescence of GaN/GaAs(111) B grown by molecular beam epitaxy with hydrazine

S. A. Nikishin, V. G. Antipov, A. I. Guriev, V. A. Elyukhin, N. N. Faleev, Yu A. Kudriavtsev, A. B. Lebedev, T. V. Shubina, A. S. Zubrilov, H. Temkin

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4 Scopus citations


Hexagonal GaN layers were grown on (111) B GaAs substrates by gas-source molecular beam epitaxy using hydrazine as a source of nitrogen. A smooth and abrupt AIN/GaAs interface was prepared by nitridation of an A1As buffer layer grown on clean GaAs(111) B surface. This buffer layer is stable at growth temperatures above 700 °C. The A1N layer prepared on this buffer exhibits two-dimensional growth. The subsequent GaN and GaInN layers show a quasi-two-dimensional growth. The photo-and cathodoluminescence spectra of these samples show a narrow (∼160 meV) band-edge emission and the absence of the "yellow" defect band. Further narrowing (∼20 meV) of the edge emission in unintentionally In-doped GaN is ascribed to the presence of confined domains of Ga1-xInxN.

Original languageEnglish
Pages (from-to)1289-1292
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
StatePublished - 1998


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