Luminescence of as-grown and thermally annealed GaAsN/GaAs

S. Francoeur; G. Sivaraman; Y. Qiu; S. Nikishin; H. Temkin

doi:10.1063/1.121206

Luminescence of as-grown and thermally annealed GaAsN/GaAs

S. Francoeur, G. Sivaraman, Y. Qiu, S. Nikishin, H. Temkin

Electrical and Computer Engineering

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Abstract

We report a study of the luminescence properties of coherently strained GaAs_1-xN_x grown on GaAs by metalorganic molecular beam epitaxy. Well-defined photoluminescence was observed in samples with a nitrogen concentration up to 3%. Samples subjected to thermal anneals, investigated by x-ray diffraction and photoluminescence, show increased nitrogen incorporation and significant improvements in the luminescence efficiency. A band-gap reduction of more than 400 meV, compared to GaAs, is observed for a nitrogen concentration of ∼3%. For the range of nitrogen concentrations investigated here, the band gap follows predictions of the dielectric model of Van Vechten [J. A. Van Vechten and T. K. Bergstresser, Phys. Rev. B 1, 3351 (1970), and references therein].

Original language	English
Pages (from-to)	1857-1859
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	15
DOIs	https://doi.org/10.1063/1.121206
State	Published - 1998

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title = "Luminescence of as-grown and thermally annealed GaAsN/GaAs",

abstract = "We report a study of the luminescence properties of coherently strained GaAs1-xNx grown on GaAs by metalorganic molecular beam epitaxy. Well-defined photoluminescence was observed in samples with a nitrogen concentration up to 3%. Samples subjected to thermal anneals, investigated by x-ray diffraction and photoluminescence, show increased nitrogen incorporation and significant improvements in the luminescence efficiency. A band-gap reduction of more than 400 meV, compared to GaAs, is observed for a nitrogen concentration of ∼3%. For the range of nitrogen concentrations investigated here, the band gap follows predictions of the dielectric model of Van Vechten [J. A. Van Vechten and T. K. Bergstresser, Phys. Rev. B 1, 3351 (1970), and references therein].",

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year = "1998",

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journal = "Applied Physics Letters",

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T1 - Luminescence of as-grown and thermally annealed GaAsN/GaAs

AU - Francoeur, S.

AU - Sivaraman, G.

AU - Qiu, Y.

AU - Nikishin, S.

AU - Temkin, H.

PY - 1998

Y1 - 1998

N2 - We report a study of the luminescence properties of coherently strained GaAs1-xNx grown on GaAs by metalorganic molecular beam epitaxy. Well-defined photoluminescence was observed in samples with a nitrogen concentration up to 3%. Samples subjected to thermal anneals, investigated by x-ray diffraction and photoluminescence, show increased nitrogen incorporation and significant improvements in the luminescence efficiency. A band-gap reduction of more than 400 meV, compared to GaAs, is observed for a nitrogen concentration of ∼3%. For the range of nitrogen concentrations investigated here, the band gap follows predictions of the dielectric model of Van Vechten [J. A. Van Vechten and T. K. Bergstresser, Phys. Rev. B 1, 3351 (1970), and references therein].

AB - We report a study of the luminescence properties of coherently strained GaAs1-xNx grown on GaAs by metalorganic molecular beam epitaxy. Well-defined photoluminescence was observed in samples with a nitrogen concentration up to 3%. Samples subjected to thermal anneals, investigated by x-ray diffraction and photoluminescence, show increased nitrogen incorporation and significant improvements in the luminescence efficiency. A band-gap reduction of more than 400 meV, compared to GaAs, is observed for a nitrogen concentration of ∼3%. For the range of nitrogen concentrations investigated here, the band gap follows predictions of the dielectric model of Van Vechten [J. A. Van Vechten and T. K. Bergstresser, Phys. Rev. B 1, 3351 (1970), and references therein].

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DO - 10.1063/1.121206

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VL - 72

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EP - 1859

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Luminescence of as-grown and thermally annealed GaAsN/GaAs

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