Luminescence and photomodulated transmission measurements in InGaAs/GaAs modulation doped single quantum wells

F. Iikawa; A. A. Bernussi; A. G. Soares; F. O. Plentz; P. Motisuke; M. A. Sacilotti

doi:10.1063/1.356155

Luminescence and photomodulated transmission measurements in InGaAs/GaAs modulation doped single quantum wells

F. Iikawa, A. A. Bernussi, A. G. Soares, F. O. Plentz, P. Motisuke, M. A. Sacilotti

Electrical and Computer Engineering

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Abstract

Photoluminescence and photomodulated transmission measurements on In _0.2Ga_0.8As/ GaAs/Al_0.3Ga_0.7As modulation doped pseudomorphic single quantum wells are presented. Photomodulated transmission spectra at low temperatures showed sharp lines that are separated with respect to the luminescence peaks due to the Stokes shift. From the Stokes shift we estimated the Fermi energy and the two-dimensional electron gas density. The obtained results are in good agreement with Shubnikov-de-Haas data. The temperature dependence of the optical spectra was also investigated. The photomodulated transmission technique is shown to be a good tool to evaluate the electronic properties of modulation doped single quantum well structures, including an estimation of the Fermi energy and the two-dimensional electron gas density.

Original language	English
Pages (from-to)	3071-3074
Number of pages	4
Journal	Journal of Applied Physics
Volume	75
Issue number	6
DOIs	https://doi.org/10.1063/1.356155
State	Published - 1994

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@article{b2b7d7d9777b488f81211d2e0e51ee3d,

title = "Luminescence and photomodulated transmission measurements in InGaAs/GaAs modulation doped single quantum wells",

abstract = "Photoluminescence and photomodulated transmission measurements on In 0.2Ga0.8As/ GaAs/Al0.3Ga0.7As modulation doped pseudomorphic single quantum wells are presented. Photomodulated transmission spectra at low temperatures showed sharp lines that are separated with respect to the luminescence peaks due to the Stokes shift. From the Stokes shift we estimated the Fermi energy and the two-dimensional electron gas density. The obtained results are in good agreement with Shubnikov-de-Haas data. The temperature dependence of the optical spectra was also investigated. The photomodulated transmission technique is shown to be a good tool to evaluate the electronic properties of modulation doped single quantum well structures, including an estimation of the Fermi energy and the two-dimensional electron gas density.",

author = "F. Iikawa and Bernussi, {A. A.} and Soares, {A. G.} and Plentz, {F. O.} and P. Motisuke and Sacilotti, {M. A.}",

year = "1994",

doi = "10.1063/1.356155",

language = "English",

volume = "75",

pages = "3071--3074",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "6",

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TY - JOUR

T1 - Luminescence and photomodulated transmission measurements in InGaAs/GaAs modulation doped single quantum wells

AU - Iikawa, F.

AU - Bernussi, A. A.

AU - Soares, A. G.

AU - Plentz, F. O.

AU - Motisuke, P.

AU - Sacilotti, M. A.

PY - 1994

Y1 - 1994

N2 - Photoluminescence and photomodulated transmission measurements on In 0.2Ga0.8As/ GaAs/Al0.3Ga0.7As modulation doped pseudomorphic single quantum wells are presented. Photomodulated transmission spectra at low temperatures showed sharp lines that are separated with respect to the luminescence peaks due to the Stokes shift. From the Stokes shift we estimated the Fermi energy and the two-dimensional electron gas density. The obtained results are in good agreement with Shubnikov-de-Haas data. The temperature dependence of the optical spectra was also investigated. The photomodulated transmission technique is shown to be a good tool to evaluate the electronic properties of modulation doped single quantum well structures, including an estimation of the Fermi energy and the two-dimensional electron gas density.

AB - Photoluminescence and photomodulated transmission measurements on In 0.2Ga0.8As/ GaAs/Al0.3Ga0.7As modulation doped pseudomorphic single quantum wells are presented. Photomodulated transmission spectra at low temperatures showed sharp lines that are separated with respect to the luminescence peaks due to the Stokes shift. From the Stokes shift we estimated the Fermi energy and the two-dimensional electron gas density. The obtained results are in good agreement with Shubnikov-de-Haas data. The temperature dependence of the optical spectra was also investigated. The photomodulated transmission technique is shown to be a good tool to evaluate the electronic properties of modulation doped single quantum well structures, including an estimation of the Fermi energy and the two-dimensional electron gas density.

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U2 - 10.1063/1.356155

DO - 10.1063/1.356155

M3 - Article

AN - SCOPUS:0028404308

SN - 0021-8979

VL - 75

SP - 3071

EP - 3074

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Luminescence and photomodulated transmission measurements in InGaAs/GaAs modulation doped single quantum wells

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