Low threshold current GaInAs/GaAs single quantum well lasers with GaInP cladding layers

R. B. Martins, A. A. Bernussi, A. M. Machado

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Strained-layer GaInAs/GaAs/GaInP single quantum well separate confinement heterostructure lasers emitting at 980 nm are reported. Broad area and ridge waveguide uncoated lasers showed threshold current as low as 11mA and external differential quantum efficiency of 65%. Far field patterns exhibited fundamental transverse mode operation with divergence of 10.5° and 20° for directions parallel and perpendicular to the junction plane, respectively.

Original languageEnglish
Title of host publication1993 IEEE 5th International Conference on Indium Phosphide and Related Materials
PublisherPubl by IEEE
Pages607-610
Number of pages4
ISBN (Print)0780309944
StatePublished - 1993
Event1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4) - Paris, Fr
Duration: Apr 19 1993Apr 22 1993

Publication series

Name1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

Conference

Conference1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4)
CityParis, Fr
Period04/19/9304/22/93

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