Low-temperature epitaxial growth and photoluminescence characterization of GaN

A. Dissanayake; J. Y. Lin; H. X. Jiang; Z. J. Yu; J. H. Edgar

doi:10.1063/1.112729

Low-temperature epitaxial growth and photoluminescence characterization of GaN

A. Dissanayake, J. Y. Lin, H. X. Jiang, Z. J. Yu, J. H. Edgar

Electrical and Computer Engineering

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14 Scopus citations

Abstract

Epitaxial layers of GaN on sapphire substrates have been grown by metalorganic chemical-vapor deposition at a deposition temperature as low as 400°C, which is the lowest temperature for successful epitaxial growth of GaN by any technique. This is achieved by controlling the low flow rate of the source gases and by first depositing an AlN buffer layer at 400°C. Low-temperature photoluminescence measurements have been employed to study the optical properties of the films deposited at different temperatures.

Original language	English
Pages (from-to)	2317-2319
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	18
DOIs	https://doi.org/10.1063/1.112729
State	Published - 1994

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title = "Low-temperature epitaxial growth and photoluminescence characterization of GaN",

abstract = "Epitaxial layers of GaN on sapphire substrates have been grown by metalorganic chemical-vapor deposition at a deposition temperature as low as 400°C, which is the lowest temperature for successful epitaxial growth of GaN by any technique. This is achieved by controlling the low flow rate of the source gases and by first depositing an AlN buffer layer at 400°C. Low-temperature photoluminescence measurements have been employed to study the optical properties of the films deposited at different temperatures.",

author = "A. Dissanayake and Lin, {J. Y.} and Jiang, {H. X.} and Yu, {Z. J.} and Edgar, {J. H.}",

year = "1994",

doi = "10.1063/1.112729",

language = "English",

volume = "65",

pages = "2317--2319",

journal = "Applied Physics Letters",

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AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Yu, Z. J.

AU - Edgar, J. H.

PY - 1994

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N2 - Epitaxial layers of GaN on sapphire substrates have been grown by metalorganic chemical-vapor deposition at a deposition temperature as low as 400°C, which is the lowest temperature for successful epitaxial growth of GaN by any technique. This is achieved by controlling the low flow rate of the source gases and by first depositing an AlN buffer layer at 400°C. Low-temperature photoluminescence measurements have been employed to study the optical properties of the films deposited at different temperatures.

AB - Epitaxial layers of GaN on sapphire substrates have been grown by metalorganic chemical-vapor deposition at a deposition temperature as low as 400°C, which is the lowest temperature for successful epitaxial growth of GaN by any technique. This is achieved by controlling the low flow rate of the source gases and by first depositing an AlN buffer layer at 400°C. Low-temperature photoluminescence measurements have been employed to study the optical properties of the films deposited at different temperatures.

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