Low resistance ohmic contacts to p-type GaN and AIGaN

I. Chary, B. Borisov, V. Kuryatkov, Yu Kudryavtsev, R. Asomoza, S. Nikishin, M. Holtz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We report the influence of surface treatment, annealing temperature and metal bilayer thickness on the specific contact resistance (μc) of Au/Ni ohmic contacts to p-GaN and p-A1GaN. Ohnuc contact on p-GaN with a hole concentration of 6.5 x 1017 cm-3, shows the lowest μC of ~9.2x 10-6 Ω cm2, when GaN was treated in HCI:H20 (3:1) solution before metal deposition and annealed at 500°C for 10 minutes in 90% N2 and 10% o2 atmosphere. Similar procedure applied on p-AlGa,N (x = 5-7%), with a hole concentration of 2.3 x l017 cm3, yields aμc of 1.8 x l0-4 Ω cm2. An increase is observed in μ when Mg doping exceeds 4 x 1019 cm3 in both p-GaN and p-A1GaN. This is attributed to Mg self compensation. This increase is more pronounced in A1GaN which we attribute to the presence of residual native aluminum oxides.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices
Pages169-174
Number of pages6
StatePublished - 2009
EventPerformance and Reliability of Semiconductor Devices - Boston, MA, United States
Duration: Nov 30 2008Dec 3 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1108
ISSN (Print)0272-9172

Conference

ConferencePerformance and Reliability of Semiconductor Devices
CountryUnited States
CityBoston, MA
Period11/30/0812/3/08

Fingerprint Dive into the research topics of 'Low resistance ohmic contacts to p-type GaN and AIGaN'. Together they form a unique fingerprint.

  • Cite this

    Chary, I., Borisov, B., Kuryatkov, V., Kudryavtsev, Y., Asomoza, R., Nikishin, S., & Holtz, M. (2009). Low resistance ohmic contacts to p-type GaN and AIGaN. In Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices (pp. 169-174). (Materials Research Society Symposium Proceedings; Vol. 1108).