Low resistance ohmic contacts to p-type GaN and AIGaN

I. Chary; B. Borisov; V. Kuryatkov; Yu Kudryavtsev; R. Asomoza; S. Nikishin; M. Holtz

Low resistance ohmic contacts to p-type GaN and AIGaN

I. Chary, B. Borisov, V. Kuryatkov, Yu Kudryavtsev, R. Asomoza, S. Nikishin, M. Holtz

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

We report the influence of surface treatment, annealing temperature and metal bilayer thickness on the specific contact resistance (μc) of Au/Ni ohmic contacts to p-GaN and p-A1GaN. Ohnuc contact on p-GaN with a hole concentration of 6.5 x 10¹⁷ cm^-3, shows the lowest μC of ~9.2x 10^-6 Ω cm², when GaN was treated in HCI:H₂0 (3:1) solution before metal deposition and annealed at 500°C for 10 minutes in 90% N₂ and 10% o₂ atmosphere. Similar procedure applied on p-AlGa,N (x = 5-7%), with a hole concentration of 2.3 x l0¹⁷ cm³, yields aμc of 1.8 x l0^-4 Ω cm². An increase is observed in μ when Mg doping exceeds 4 x 10¹⁹ cm³ in both p-GaN and p-A1GaN. This is attributed to Mg self compensation. This increase is more pronounced in A1GaN which we attribute to the presence of residual native aluminum oxides.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices
Pages	169-174
Number of pages	6
State	Published - 2009
Event	Performance and Reliability of Semiconductor Devices - Boston, MA, United States Duration: Nov 30 2008 → Dec 3 2008

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1108
ISSN (Print)	0272-9172

Conference

Conference	Performance and Reliability of Semiconductor Devices
Country/Territory	United States
City	Boston, MA
Period	11/30/08 → 12/3/08

Cite this

@inproceedings{776cf1a3868540c495775c78c956a35f,

title = "Low resistance ohmic contacts to p-type GaN and AIGaN",

abstract = "We report the influence of surface treatment, annealing temperature and metal bilayer thickness on the specific contact resistance (μc) of Au/Ni ohmic contacts to p-GaN and p-A1GaN. Ohnuc contact on p-GaN with a hole concentration of 6.5 x 1017 cm-3, shows the lowest μC of ~9.2x 10-6 Ω cm2, when GaN was treated in HCI:H20 (3:1) solution before metal deposition and annealed at 500°C for 10 minutes in 90% N2 and 10% o2 atmosphere. Similar procedure applied on p-AlGa,N (x = 5-7%), with a hole concentration of 2.3 x l017 cm3, yields aμc of 1.8 x l0-4 Ω cm2. An increase is observed in μ when Mg doping exceeds 4 x 1019 cm3 in both p-GaN and p-A1GaN. This is attributed to Mg self compensation. This increase is more pronounced in A1GaN which we attribute to the presence of residual native aluminum oxides.",

author = "I. Chary and B. Borisov and V. Kuryatkov and Yu Kudryavtsev and R. Asomoza and S. Nikishin and M. Holtz",

year = "2009",

language = "English",

isbn = "9781605110806",

series = "Materials Research Society Symposium Proceedings",

pages = "169--174",

booktitle = "Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices",

note = "Performance and Reliability of Semiconductor Devices ; Conference date: 30-11-2008 Through 03-12-2008",

}

Chary, I, Borisov, B, Kuryatkov, V, Kudryavtsev, Y, Asomoza, R, Nikishin, S & Holtz, M 2009, Low resistance ohmic contacts to p-type GaN and AIGaN. in Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices. Materials Research Society Symposium Proceedings, vol. 1108, pp. 169-174, Performance and Reliability of Semiconductor Devices, Boston, MA, United States, 11/30/08.

Low resistance ohmic contacts to p-type GaN and AIGaN. / Chary, I.; Borisov, B.; Kuryatkov, V. et al.
Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices. 2009. p. 169-174 (Materials Research Society Symposium Proceedings; Vol. 1108).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low resistance ohmic contacts to p-type GaN and AIGaN

AU - Chary, I.

AU - Borisov, B.

AU - Kuryatkov, V.

AU - Kudryavtsev, Yu

AU - Asomoza, R.

AU - Nikishin, S.

AU - Holtz, M.

PY - 2009

Y1 - 2009

N2 - We report the influence of surface treatment, annealing temperature and metal bilayer thickness on the specific contact resistance (μc) of Au/Ni ohmic contacts to p-GaN and p-A1GaN. Ohnuc contact on p-GaN with a hole concentration of 6.5 x 1017 cm-3, shows the lowest μC of ~9.2x 10-6 Ω cm2, when GaN was treated in HCI:H20 (3:1) solution before metal deposition and annealed at 500°C for 10 minutes in 90% N2 and 10% o2 atmosphere. Similar procedure applied on p-AlGa,N (x = 5-7%), with a hole concentration of 2.3 x l017 cm3, yields aμc of 1.8 x l0-4 Ω cm2. An increase is observed in μ when Mg doping exceeds 4 x 1019 cm3 in both p-GaN and p-A1GaN. This is attributed to Mg self compensation. This increase is more pronounced in A1GaN which we attribute to the presence of residual native aluminum oxides.

AB - We report the influence of surface treatment, annealing temperature and metal bilayer thickness on the specific contact resistance (μc) of Au/Ni ohmic contacts to p-GaN and p-A1GaN. Ohnuc contact on p-GaN with a hole concentration of 6.5 x 1017 cm-3, shows the lowest μC of ~9.2x 10-6 Ω cm2, when GaN was treated in HCI:H20 (3:1) solution before metal deposition and annealed at 500°C for 10 minutes in 90% N2 and 10% o2 atmosphere. Similar procedure applied on p-AlGa,N (x = 5-7%), with a hole concentration of 2.3 x l017 cm3, yields aμc of 1.8 x l0-4 Ω cm2. An increase is observed in μ when Mg doping exceeds 4 x 1019 cm3 in both p-GaN and p-A1GaN. This is attributed to Mg self compensation. This increase is more pronounced in A1GaN which we attribute to the presence of residual native aluminum oxides.

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M3 - Conference contribution

AN - SCOPUS:70349281533

SN - 9781605110806

T3 - Materials Research Society Symposium Proceedings

SP - 169

EP - 174

BT - Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices

T2 - Performance and Reliability of Semiconductor Devices

Y2 - 30 November 2008 through 3 December 2008

ER -

Low resistance ohmic contacts to p-type GaN and AIGaN

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