Low-resistance ohmic contacts to digital alloys of n-AlGaN/AlN

J. Yun, K. Choi, K. Mathur, V. Kuryatkov, B. Borisov, G. Kipshidze, S. Nikishin, H. Temkin

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Low contact resistance to digital alloys of n-type AlGaN/AlN with high average Al concentration is described. Low-energy electron diffraction was used to evaluate surface precleaning with HCl and buffered HF. The contact metallization consisting of a stack of Ti/Al/Ti/Au, 20/100/45/60 nm in thickness, was e-beam deposited and etch-patterned. The lowest specific contact resistance of 5.6 × 10-5 Ω · cm2 was obtained after annealing in N2 ambient at 700 °C.

Original languageEnglish
Pages (from-to)22-24
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number1
DOIs
StatePublished - Jan 2006

Keywords

  • AlGaN
  • GaN
  • Light-emitting diode
  • Ohmic contact
  • Superlattices

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