Low-noise GaN Schottky diodes on Si(111) by molecular beam epitaxy

Peter W. Deelman; Robert N. Bicknell-Tassius; Sergey Nikishin; Vladimir Kuryatkov; Henryk Temkin

doi:10.1063/1.1357448

Low-noise GaN Schottky diodes on Si(111) by molecular beam epitaxy

Peter W. Deelman, Robert N. Bicknell-Tassius, Sergey Nikishin, Vladimir Kuryatkov, Henryk Temkin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We report on the achievement of mesa-isolated Schottky diodes fabricated from n-GaN epilayers grown by gas-source molecular beam epitaxy on Si(111) that exhibit extremely low noise and dark current. Silicon dioxide grown by plasma-enhanced chemical vapor deposition provided both surface passivation and electrical isolation, and the Schottky contact was a 10 nm Pd thin film. The dark current of an 86×86 μm² diode was 2.10 × 10^-8 A/cm² at -2 V bias, and the zero-bias noise power density at 1 Hz is as low a 9 × 10^-29 A²/Hz.

Original language	English
Pages (from-to)	2172-2174
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	15
DOIs	https://doi.org/10.1063/1.1357448
State	Published - Apr 9 2001

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title = "Low-noise GaN Schottky diodes on Si(111) by molecular beam epitaxy",

abstract = "We report on the achievement of mesa-isolated Schottky diodes fabricated from n-GaN epilayers grown by gas-source molecular beam epitaxy on Si(111) that exhibit extremely low noise and dark current. Silicon dioxide grown by plasma-enhanced chemical vapor deposition provided both surface passivation and electrical isolation, and the Schottky contact was a 10 nm Pd thin film. The dark current of an 86×86 μm2 diode was 2.10 × 10-8 A/cm2 at -2 V bias, and the zero-bias noise power density at 1 Hz is as low a 9 × 10-29 A2/Hz.",

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AU - Deelman, Peter W.

AU - Bicknell-Tassius, Robert N.

AU - Nikishin, Sergey

AU - Kuryatkov, Vladimir

AU - Temkin, Henryk

PY - 2001/4/9

Y1 - 2001/4/9

N2 - We report on the achievement of mesa-isolated Schottky diodes fabricated from n-GaN epilayers grown by gas-source molecular beam epitaxy on Si(111) that exhibit extremely low noise and dark current. Silicon dioxide grown by plasma-enhanced chemical vapor deposition provided both surface passivation and electrical isolation, and the Schottky contact was a 10 nm Pd thin film. The dark current of an 86×86 μm2 diode was 2.10 × 10-8 A/cm2 at -2 V bias, and the zero-bias noise power density at 1 Hz is as low a 9 × 10-29 A2/Hz.

AB - We report on the achievement of mesa-isolated Schottky diodes fabricated from n-GaN epilayers grown by gas-source molecular beam epitaxy on Si(111) that exhibit extremely low noise and dark current. Silicon dioxide grown by plasma-enhanced chemical vapor deposition provided both surface passivation and electrical isolation, and the Schottky contact was a 10 nm Pd thin film. The dark current of an 86×86 μm2 diode was 2.10 × 10-8 A/cm2 at -2 V bias, and the zero-bias noise power density at 1 Hz is as low a 9 × 10-29 A2/Hz.

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M3 - Article

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EP - 2174

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

ER -

Low-noise GaN Schottky diodes on Si(111) by molecular beam epitaxy

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