Abstract
We report on the achievement of mesa-isolated Schottky diodes fabricated from n-GaN epilayers grown by gas-source molecular beam epitaxy on Si(111) that exhibit extremely low noise and dark current. Silicon dioxide grown by plasma-enhanced chemical vapor deposition provided both surface passivation and electrical isolation, and the Schottky contact was a 10 nm Pd thin film. The dark current of an 86×86 μm2 diode was 2.10 × 10-8 A/cm2 at -2 V bias, and the zero-bias noise power density at 1 Hz is as low a 9 × 10-29 A2/Hz.
Original language | English |
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Pages (from-to) | 2172-2174 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 78 |
Issue number | 15 |
DOIs | |
State | Published - Apr 9 2001 |