Lock-on physics in semi-insulating GaAs: Combination of trap-to-band impact ionization, moving electric fields and photon recycling

A. R. Chowdhury; J. C. Dickens; A. A. Neuber; R. Ness; R. P. Joshi

doi:10.1063/1.5013248

Lock-on physics in semi-insulating GaAs: Combination of trap-to-band impact ionization, moving electric fields and photon recycling

A. R. Chowdhury, J. C. Dickens, A. A. Neuber, R. Ness, R. P. Joshi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The time-dependent photoconductive current response of semi-insulating GaAs is probed based on one-dimensional simulations, with a focus on the lock-on phenomenon. Our results capture most of the experimental observations. It is shown that trap-to-band impact ionization fuels local field enhancements, and photon recycling also plays an important role in pushing the device towards lock-on above a 3.5 kV/cm threshold field. The results compare well with actual data in terms of the magnitudes, the rise times, and the oscillatory behavior seen at higher currents. Moving multiple domains are predicted, and the response shown depended on the location of the photoexcitation spot relative to the electrodes.

Original language	English
Article number	085703
Journal	Journal of Applied Physics
Volume	123
Issue number	8
DOIs	https://doi.org/10.1063/1.5013248
State	Published - Feb 28 2018

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title = "Lock-on physics in semi-insulating GaAs: Combination of trap-to-band impact ionization, moving electric fields and photon recycling",

abstract = "The time-dependent photoconductive current response of semi-insulating GaAs is probed based on one-dimensional simulations, with a focus on the lock-on phenomenon. Our results capture most of the experimental observations. It is shown that trap-to-band impact ionization fuels local field enhancements, and photon recycling also plays an important role in pushing the device towards lock-on above a 3.5 kV/cm threshold field. The results compare well with actual data in terms of the magnitudes, the rise times, and the oscillatory behavior seen at higher currents. Moving multiple domains are predicted, and the response shown depended on the location of the photoexcitation spot relative to the electrodes.",

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AU - Dickens, J. C.

AU - Neuber, A. A.

AU - Ness, R.

AU - Joshi, R. P.

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AB - The time-dependent photoconductive current response of semi-insulating GaAs is probed based on one-dimensional simulations, with a focus on the lock-on phenomenon. Our results capture most of the experimental observations. It is shown that trap-to-band impact ionization fuels local field enhancements, and photon recycling also plays an important role in pushing the device towards lock-on above a 3.5 kV/cm threshold field. The results compare well with actual data in terms of the magnitudes, the rise times, and the oscillatory behavior seen at higher currents. Moving multiple domains are predicted, and the response shown depended on the location of the photoexcitation spot relative to the electrodes.

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Lock-on physics in semi-insulating GaAs: Combination of trap-to-band impact ionization, moving electric fields and photon recycling

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