Abstract
Certain high-voltage pulsed-power switches based on semi-insulating GaAs or InP exhibit a "lock-on" effect. In this paper, this effect is argued to be fundamentally a transferred-electron effect, and its experimentally observed characteristics are explained. The lock-on effect causes high forward drop and high power dissipation for certain pulsed-power switches based on GaAs and various other direct-gap materials.
Original language | English |
---|---|
Pages (from-to) | 3036-3038 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 71 |
Issue number | 6 |
DOIs | |
State | Published - 1992 |