Lock-on effect in pulsed-power semiconductor switches

M. A. Gundersen; J. H. Hur; H. Zhao; Charles W. Myles

doi:10.1063/1.350988

Lock-on effect in pulsed-power semiconductor switches

M. A. Gundersen, J. H. Hur, H. Zhao, Charles W. Myles

Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Certain high-voltage pulsed-power switches based on semi-insulating GaAs or InP exhibit a "lock-on" effect. In this paper, this effect is argued to be fundamentally a transferred-electron effect, and its experimentally observed characteristics are explained. The lock-on effect causes high forward drop and high power dissipation for certain pulsed-power switches based on GaAs and various other direct-gap materials.

Original language	English
Pages (from-to)	3036-3038
Number of pages	3
Journal	Journal of Applied Physics
Volume	71
Issue number	6
DOIs	https://doi.org/10.1063/1.350988
State	Published - 1992

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10.1063/1.350988

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title = "Lock-on effect in pulsed-power semiconductor switches",

abstract = "Certain high-voltage pulsed-power switches based on semi-insulating GaAs or InP exhibit a {"}lock-on{"} effect. In this paper, this effect is argued to be fundamentally a transferred-electron effect, and its experimentally observed characteristics are explained. The lock-on effect causes high forward drop and high power dissipation for certain pulsed-power switches based on GaAs and various other direct-gap materials.",

author = "Gundersen, {M. A.} and Hur, {J. H.} and H. Zhao and Myles, {Charles W.}",

year = "1992",

doi = "10.1063/1.350988",

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AU - Gundersen, M. A.

AU - Hur, J. H.

AU - Zhao, H.

AU - Myles, Charles W.

PY - 1992

Y1 - 1992

N2 - Certain high-voltage pulsed-power switches based on semi-insulating GaAs or InP exhibit a "lock-on" effect. In this paper, this effect is argued to be fundamentally a transferred-electron effect, and its experimentally observed characteristics are explained. The lock-on effect causes high forward drop and high power dissipation for certain pulsed-power switches based on GaAs and various other direct-gap materials.

AB - Certain high-voltage pulsed-power switches based on semi-insulating GaAs or InP exhibit a "lock-on" effect. In this paper, this effect is argued to be fundamentally a transferred-electron effect, and its experimentally observed characteristics are explained. The lock-on effect causes high forward drop and high power dissipation for certain pulsed-power switches based on GaAs and various other direct-gap materials.

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U2 - 10.1063/1.350988

DO - 10.1063/1.350988

M3 - Article

AN - SCOPUS:0013444550

SN - 0021-8979

VL - 71

SP - 3036

EP - 3038

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Lock-on effect in pulsed-power semiconductor switches

Abstract

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