Lock-on effect in pulsed-power semiconductor switches

M. A. Gundersen, J. H. Hur, H. Zhao, Charles W. Myles

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Certain high-voltage pulsed-power switches based on semi-insulating GaAs or InP exhibit a "lock-on" effect. In this paper, this effect is argued to be fundamentally a transferred-electron effect, and its experimentally observed characteristics are explained. The lock-on effect causes high forward drop and high power dissipation for certain pulsed-power switches based on GaAs and various other direct-gap materials.

Original languageEnglish
Pages (from-to)3036-3038
Number of pages3
JournalJournal of Applied Physics
Volume71
Issue number6
DOIs
StatePublished - 1992

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