Abstract
Gallium nitride (GaN) single crystals were implanted with protons (deuterons) at temperatures below 20 K and studied by infrared absorption spectroscopy at 8 K without any intermediate heating of the samples. A strong absorption line was observed at 1456cm-1 after proton implantation. The annealing of the 1456-cm-1 line at about 225 K is correlated with the appearance of two absorption lines at 3027 and 3139cm-1, which were shown previously to represent N-H stretch modes of VGa-H defects in GaN. The observation of the 1456-cm-1 line after low-temperature implantation, together with the observation of a correlated annealing for the 1456-cm-1 line and VGa-H centers, suggests that the line originates from isolated H in GaN. First-principles local-density-functional theory was used to calculate the H-related local mode frequencies of different structures and charge states of isolated H in GaN. The likely candidates for the assignment of the 1456-cm-1 line are discussed on basis of mode frequencies predicted for different structures.
Original language | English |
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Pages (from-to) | 464-467 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 376-377 |
Issue number | 1 |
DOIs | |
State | Published - Apr 1 2006 |
Event | Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005 |
Keywords
- GaN
- Hydrogen
- Implantation
- Local vibrational mode