TY - JOUR
T1 - Local vibrational modes of hydrogen in GaN
T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors
AU - Pereira, R. N.
AU - Bech Nielsen, B.
AU - Stavola, M.
AU - Sanati, M.
AU - Estreicher, S. K.
AU - Mizuta, M.
N1 - Funding Information:
This work was supported in part by the Danish National Research Foundation through the Aahrus Center for Advanced Physics and by the Danish National Research Council. Work performed by M. Stavola was supported by NSF grant DMR 0403641. The work in Texas Tech University was supported in part by the Robert A. Welch Foundation and the National Renewable Energy Laboratory.
PY - 2006/4/1
Y1 - 2006/4/1
N2 - Gallium nitride (GaN) single crystals were implanted with protons (deuterons) at temperatures below 20 K and studied by infrared absorption spectroscopy at 8 K without any intermediate heating of the samples. A strong absorption line was observed at 1456cm-1 after proton implantation. The annealing of the 1456-cm-1 line at about 225 K is correlated with the appearance of two absorption lines at 3027 and 3139cm-1, which were shown previously to represent N-H stretch modes of VGa-H defects in GaN. The observation of the 1456-cm-1 line after low-temperature implantation, together with the observation of a correlated annealing for the 1456-cm-1 line and VGa-H centers, suggests that the line originates from isolated H in GaN. First-principles local-density-functional theory was used to calculate the H-related local mode frequencies of different structures and charge states of isolated H in GaN. The likely candidates for the assignment of the 1456-cm-1 line are discussed on basis of mode frequencies predicted for different structures.
AB - Gallium nitride (GaN) single crystals were implanted with protons (deuterons) at temperatures below 20 K and studied by infrared absorption spectroscopy at 8 K without any intermediate heating of the samples. A strong absorption line was observed at 1456cm-1 after proton implantation. The annealing of the 1456-cm-1 line at about 225 K is correlated with the appearance of two absorption lines at 3027 and 3139cm-1, which were shown previously to represent N-H stretch modes of VGa-H defects in GaN. The observation of the 1456-cm-1 line after low-temperature implantation, together with the observation of a correlated annealing for the 1456-cm-1 line and VGa-H centers, suggests that the line originates from isolated H in GaN. First-principles local-density-functional theory was used to calculate the H-related local mode frequencies of different structures and charge states of isolated H in GaN. The likely candidates for the assignment of the 1456-cm-1 line are discussed on basis of mode frequencies predicted for different structures.
KW - GaN
KW - Hydrogen
KW - Implantation
KW - Local vibrational mode
UR - http://www.scopus.com/inward/record.url?scp=33645153313&partnerID=8YFLogxK
U2 - 10.1016/j.physb.2005.12.119
DO - 10.1016/j.physb.2005.12.119
M3 - Conference article
AN - SCOPUS:33645153313
SN - 0921-4526
VL - 376-377
SP - 464
EP - 467
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 1
Y2 - 24 July 2005 through 29 July 2005
ER -