Light-element impurities and their reactions in multicrystalline Si

Michael Stavola, Stefan K. Estreicher, Mike Seacrist

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Vibrational spectroscopy has been used to investigate the properties of hydrogen in multicrystalline Si (mc-Si) and its interactions with carbon impurities that can be present with high concentration. The properties of point defects containing N and O have been investigated by way of their vibrational properties and their far-infrared electronic transitions.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XV
PublisherTrans Tech Publications Ltd
Pages201-208
Number of pages8
ISBN (Print)9783037858240
DOIs
StatePublished - 2014
Event15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 - Oxford, United Kingdom
Duration: Sep 22 2013Sep 27 2013

Publication series

NameSolid State Phenomena
Volume205-206
ISSN (Print)1012-0394

Conference

Conference15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
CountryUnited Kingdom
CityOxford
Period09/22/1309/27/13

Keywords

  • IR spectroscopy
  • Light element impurities
  • Multicrystalline Si

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