TY - JOUR
T1 - Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers
AU - Grenadier, S.
AU - Maity, A.
AU - Li, J.
AU - Lin, J. Y.
AU - Jiang, H. X.
N1 - Funding Information:
This research was supported by DOE ARPA-E (No. DEAR0000964). The DOE NNSA SSAA program (No. DE-NA0002927) supported the initial h-BN detector development efforts. H. X. Jiang and J. Y. Lin are grateful to the AT&T Foundation for the support of Ed Whitacre and Linda Whitacre endowed chairs.
Publisher Copyright:
© 2019 Author(s).
PY - 2019/8/12
Y1 - 2019/8/12
N2 - Neutron detectors based on B-10 enriched hexagonal boron nitride (h-10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors at about 58%. However, many fundamental transport parameters of h-BN, including the room temperature carrier mobility, minority carrier lifetime, and surface recombination velocity, which are essential to the performance of detectors, are still unknown. We report here the carrier drift mobilities (μ) and lifetimes (τ) of both electrons and holes in h-10BN epilayers measured by using a time-of-flight (TOF) technique. Lateral photoconductive type detectors fabricated from a 65 μm thick freestanding h-10BN epilayer were utilized to carry out the TOF measurements, which revealed μe ∼34 cm2/V s for electrons and μh ∼36 cm2/V s for holes and carrier lifetimes on the order of tens of microseconds. By combining the values of μ measured from TOF with S/μ (the ratio of the surface recombination velocity to mobility) deduced directly from the bias voltage dependence of photocurrent, S for both electrons (Se ∼1.4 × 104 cm/s) and holes (Sh ∼2.7 × 103 cm/s) in h-10BN has been extracted. The determination of these important fundamental parameters (μ, τ, and S) not only provides a better understanding of the carrier dynamics and electrical transport properties of h-BN but is also valuable for further advancing the development of h-BN materials and devices.
AB - Neutron detectors based on B-10 enriched hexagonal boron nitride (h-10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors at about 58%. However, many fundamental transport parameters of h-BN, including the room temperature carrier mobility, minority carrier lifetime, and surface recombination velocity, which are essential to the performance of detectors, are still unknown. We report here the carrier drift mobilities (μ) and lifetimes (τ) of both electrons and holes in h-10BN epilayers measured by using a time-of-flight (TOF) technique. Lateral photoconductive type detectors fabricated from a 65 μm thick freestanding h-10BN epilayer were utilized to carry out the TOF measurements, which revealed μe ∼34 cm2/V s for electrons and μh ∼36 cm2/V s for holes and carrier lifetimes on the order of tens of microseconds. By combining the values of μ measured from TOF with S/μ (the ratio of the surface recombination velocity to mobility) deduced directly from the bias voltage dependence of photocurrent, S for both electrons (Se ∼1.4 × 104 cm/s) and holes (Sh ∼2.7 × 103 cm/s) in h-10BN has been extracted. The determination of these important fundamental parameters (μ, τ, and S) not only provides a better understanding of the carrier dynamics and electrical transport properties of h-BN but is also valuable for further advancing the development of h-BN materials and devices.
UR - http://www.scopus.com/inward/record.url?scp=85070741488&partnerID=8YFLogxK
U2 - 10.1063/1.5097984
DO - 10.1063/1.5097984
M3 - Article
AN - SCOPUS:85070741488
VL - 115
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 7
M1 - 072108
ER -