Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system

Heather K. O'Brien, William Shaheen, Aderinto Ogunniyi, Charles Scozzie, Lin Cheng, Miguel Hinojosa, Kevin Lawson, Shelby Lacouture, Stephen Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Asymmetric thyristors require protection from voltage and current reversals in high-inductance capacitor discharge systems. Silicon carbide (SiC) PiN diodes capable of blocking up to 16 kV were demonstrated to have the high-current capability to transmit forward pulse current in a series configuration with a thyristor, and to clamp reverse current in an anti-parallel configuration. In series with a thyristor, diodes were switched 1000 pulses at a single-shot rate at 2000 A peak current (3.8 kA/cm2 over anode area and 2100 A2s per pulse) without any notable increases in forward voltage or reverse leakage current. In the reverse clamp configuration, a parallel pair of PiN diodes was demonstrated to block 12 kV charge on the capacitor bank, then clamp a total of 4200 A current reversal with good parallel current sharing. These evaluations demonstrate that for high current density pulsing above 10 kV, individual 16 kV PiN diodes yield lower on-state voltage loss (16 V at 2000 A) than series-stacked assemblies of 9 kV SiC PiN diodes or 6 kV Si diodes.

Original languageEnglish
Title of host publicationProceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
EditorsAllen L. Garner
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages538-541
Number of pages4
ISBN (Electronic)9781467373234
DOIs
StatePublished - Oct 1 2015
EventIEEE International Power Modulator and High Voltage Conference, IPMHVC 2014 - Santa Fe, United States
Duration: Jun 1 2014Jun 5 2014

Publication series

NameProceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014

Conference

ConferenceIEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
CountryUnited States
CitySanta Fe
Period06/1/1406/5/14

Keywords

  • Silicon carbide
  • power semiconductor devices
  • pulse power systems

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