Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system

Heather K. O'Brien; William Shaheen; Aderinto Ogunniyi; Charles Scozzie; Lin Cheng; Miguel Hinojosa; Kevin Lawson; Shelby Lacouture; Stephen Bayne

doi:10.1109/IPMHVC.2014.7287331

Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system

Heather K. O'Brien, William Shaheen, Aderinto Ogunniyi, Charles Scozzie, Lin Cheng, Miguel Hinojosa, Kevin Lawson, Shelby Lacouture, Stephen Bayne

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Asymmetric thyristors require protection from voltage and current reversals in high-inductance capacitor discharge systems. Silicon carbide (SiC) PiN diodes capable of blocking up to 16 kV were demonstrated to have the high-current capability to transmit forward pulse current in a series configuration with a thyristor, and to clamp reverse current in an anti-parallel configuration. In series with a thyristor, diodes were switched 1000 pulses at a single-shot rate at 2000 A peak current (3.8 kA/cm² over anode area and 2100 A²s per pulse) without any notable increases in forward voltage or reverse leakage current. In the reverse clamp configuration, a parallel pair of PiN diodes was demonstrated to block 12 kV charge on the capacitor bank, then clamp a total of 4200 A current reversal with good parallel current sharing. These evaluations demonstrate that for high current density pulsing above 10 kV, individual 16 kV PiN diodes yield lower on-state voltage loss (16 V at 2000 A) than series-stacked assemblies of 9 kV SiC PiN diodes or 6 kV Si diodes.

Original language	English
Title of host publication	Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
Editors	Allen L. Garner
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	538-541
Number of pages	4
ISBN (Electronic)	9781467373234
DOIs	https://doi.org/10.1109/IPMHVC.2014.7287331
State	Published - Oct 1 2015
Event	IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014 - Santa Fe, United States Duration: Jun 1 2014 → Jun 5 2014

Publication series

Name	Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014

Conference

Conference	IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
Country/Territory	United States
City	Santa Fe
Period	06/1/14 → 06/5/14

Keywords

Silicon carbide
power semiconductor devices
pulse power systems

Access to Document

10.1109/IPMHVC.2014.7287331

Cite this

O'Brien, H. K., Shaheen, W., Ogunniyi, A., Scozzie, C., Cheng, L., Hinojosa, M., Lawson, K., Lacouture, S., & Bayne, S. (2015). Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system. In A. L. Garner (Ed.), Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014 (pp. 538-541). [7287331] (Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPMHVC.2014.7287331

O'Brien, Heather K. ; Shaheen, William ; Ogunniyi, Aderinto et al. / Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system. Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014. editor / Allen L. Garner. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 538-541 (Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014).

@inproceedings{bc808a0a7d764e749ca21c3e09948003,

title = "Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system",

abstract = "Asymmetric thyristors require protection from voltage and current reversals in high-inductance capacitor discharge systems. Silicon carbide (SiC) PiN diodes capable of blocking up to 16 kV were demonstrated to have the high-current capability to transmit forward pulse current in a series configuration with a thyristor, and to clamp reverse current in an anti-parallel configuration. In series with a thyristor, diodes were switched 1000 pulses at a single-shot rate at 2000 A peak current (3.8 kA/cm2 over anode area and 2100 A2s per pulse) without any notable increases in forward voltage or reverse leakage current. In the reverse clamp configuration, a parallel pair of PiN diodes was demonstrated to block 12 kV charge on the capacitor bank, then clamp a total of 4200 A current reversal with good parallel current sharing. These evaluations demonstrate that for high current density pulsing above 10 kV, individual 16 kV PiN diodes yield lower on-state voltage loss (16 V at 2000 A) than series-stacked assemblies of 9 kV SiC PiN diodes or 6 kV Si diodes.",

keywords = "Silicon carbide, power semiconductor devices, pulse power systems",

author = "O'Brien, {Heather K.} and William Shaheen and Aderinto Ogunniyi and Charles Scozzie and Lin Cheng and Miguel Hinojosa and Kevin Lawson and Shelby Lacouture and Stephen Bayne",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; null ; Conference date: 01-06-2014 Through 05-06-2014",

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doi = "10.1109/IPMHVC.2014.7287331",

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O'Brien, HK, Shaheen, W, Ogunniyi, A, Scozzie, C, Cheng, L, Hinojosa, M, Lawson, K, Lacouture, S & Bayne, S 2015, Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system. in AL Garner (ed.), Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014., 7287331, Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 538-541, IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014, Santa Fe, United States, 06/1/14. https://doi.org/10.1109/IPMHVC.2014.7287331

Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system. / O'Brien, Heather K.; Shaheen, William; Ogunniyi, Aderinto et al.

Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014. ed. / Allen L. Garner. Institute of Electrical and Electronics Engineers Inc., 2015. p. 538-541 7287331 (Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system

AU - O'Brien, Heather K.

AU - Shaheen, William

AU - Ogunniyi, Aderinto

AU - Scozzie, Charles

AU - Cheng, Lin

AU - Hinojosa, Miguel

AU - Lawson, Kevin

AU - Lacouture, Shelby

AU - Bayne, Stephen

PY - 2015/10/1

Y1 - 2015/10/1

N2 - Asymmetric thyristors require protection from voltage and current reversals in high-inductance capacitor discharge systems. Silicon carbide (SiC) PiN diodes capable of blocking up to 16 kV were demonstrated to have the high-current capability to transmit forward pulse current in a series configuration with a thyristor, and to clamp reverse current in an anti-parallel configuration. In series with a thyristor, diodes were switched 1000 pulses at a single-shot rate at 2000 A peak current (3.8 kA/cm2 over anode area and 2100 A2s per pulse) without any notable increases in forward voltage or reverse leakage current. In the reverse clamp configuration, a parallel pair of PiN diodes was demonstrated to block 12 kV charge on the capacitor bank, then clamp a total of 4200 A current reversal with good parallel current sharing. These evaluations demonstrate that for high current density pulsing above 10 kV, individual 16 kV PiN diodes yield lower on-state voltage loss (16 V at 2000 A) than series-stacked assemblies of 9 kV SiC PiN diodes or 6 kV Si diodes.

AB - Asymmetric thyristors require protection from voltage and current reversals in high-inductance capacitor discharge systems. Silicon carbide (SiC) PiN diodes capable of blocking up to 16 kV were demonstrated to have the high-current capability to transmit forward pulse current in a series configuration with a thyristor, and to clamp reverse current in an anti-parallel configuration. In series with a thyristor, diodes were switched 1000 pulses at a single-shot rate at 2000 A peak current (3.8 kA/cm2 over anode area and 2100 A2s per pulse) without any notable increases in forward voltage or reverse leakage current. In the reverse clamp configuration, a parallel pair of PiN diodes was demonstrated to block 12 kV charge on the capacitor bank, then clamp a total of 4200 A current reversal with good parallel current sharing. These evaluations demonstrate that for high current density pulsing above 10 kV, individual 16 kV PiN diodes yield lower on-state voltage loss (16 V at 2000 A) than series-stacked assemblies of 9 kV SiC PiN diodes or 6 kV Si diodes.

KW - Silicon carbide

KW - power semiconductor devices

KW - pulse power systems

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U2 - 10.1109/IPMHVC.2014.7287331

DO - 10.1109/IPMHVC.2014.7287331

M3 - Conference contribution

AN - SCOPUS:84947093899

T3 - Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014

SP - 538

EP - 541

BT - Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014

A2 - Garner, Allen L.

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 1 June 2014 through 5 June 2014

ER -

O'Brien HK, Shaheen W, Ogunniyi A, Scozzie C, Cheng L, Hinojosa M et al. Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system. In Garner AL, editor, Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014. Institute of Electrical and Electronics Engineers Inc. 2015. p. 538-541. 7287331. (Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014). doi: 10.1109/IPMHVC.2014.7287331

Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system

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