@inproceedings{2105df23843f4a7fb37423e0aeb97445,
title = "Isotope-dependent phonon trapping at defects in semiconductors",
abstract = "Unexpectedly large isotope effects have been reported for the vibrational lifetimes of the H-C stretch mode of the CH2* defect in Si and the asymmetric stretch of interstitial O in Si as well. First-principles theory can explain these effects. The results imply that defects trap phonons for lengths of time that depend on the defect and sometimes on its isotopic composition. Some consequences of phonon trapping are discussed.",
keywords = "Isotope effects, Phonon trapping, Silicon",
author = "Estreicher, {Stefan K.} and Gibbons, {T. Michael} and Michael Stavola",
year = "2014",
doi = "10.4028/www.scientific.net/SSP.205-206.209",
language = "English",
isbn = "9783037858240",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "209--212",
booktitle = "Gettering and Defect Engineering in Semiconductor Technology XV",
note = "15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 ; Conference date: 22-09-2013 Through 27-09-2013",
}