Isotope-dependent phonon trapping at defects in semiconductors

Stefan K. Estreicher, T. Michael Gibbons, Michael Stavola

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Unexpectedly large isotope effects have been reported for the vibrational lifetimes of the H-C stretch mode of the CH2* defect in Si and the asymmetric stretch of interstitial O in Si as well. First-principles theory can explain these effects. The results imply that defects trap phonons for lengths of time that depend on the defect and sometimes on its isotopic composition. Some consequences of phonon trapping are discussed.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XV
PublisherTrans Tech Publications Ltd
Pages209-212
Number of pages4
ISBN (Print)9783037858240
DOIs
StatePublished - 2014
Event15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 - Oxford, United Kingdom
Duration: Sep 22 2013Sep 27 2013

Publication series

NameSolid State Phenomena
Volume205-206
ISSN (Print)1012-0394

Conference

Conference15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
CountryUnited Kingdom
CityOxford
Period09/22/1309/27/13

Keywords

  • Isotope effects
  • Phonon trapping
  • Silicon

Fingerprint Dive into the research topics of 'Isotope-dependent phonon trapping at defects in semiconductors'. Together they form a unique fingerprint.

  • Cite this

    Estreicher, S. K., Gibbons, T. M., & Stavola, M. (2014). Isotope-dependent phonon trapping at defects in semiconductors. In Gettering and Defect Engineering in Semiconductor Technology XV (pp. 209-212). (Solid State Phenomena; Vol. 205-206). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.205-206.209