Investigation on electrical transport properties of nanocrystalline WO3 under high pressure

Yuqiang Li, Yang Gao, Cailong Liu, Yonghao Han, Qinglin Wang, Yan Li, Pingfan Ning, Pingjuan Niu, Yanzhang Ma, Chunxiao Gao

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The electrical transport properties of nanocrystalline tungsten trioxides (WO3) under high pressures have been investigated by various electrical measurements up to 36.5 GPa. The discontinuous changes in direct-current resistivity under high pressures result from two electronic phase transitions at 4.3 and 10.5 GPa and two structural phase transitions at 24.8 and 31.6 GPa. Hall-effect measurement shows that the nanocrystalline WO3 is n-type semiconductor within the whole investigated pressure range. The carrier concentration decreases monotonously with increasing pressure, but mobility increases first and then decreases at 10.4 GPa. Through alternate-current impedance measurement, it can be found that the variation of the ratio of grain boundary resistance to grain resistance synchronizes with that of the mobility under high pressures, indicating that the grain boundary plays more important role in the carrier transport process of nanocrystalline WO3. The discontinuous changes of resistance and relaxation frequency of grain and grain boundary also provide the evidence for electronic phase transitions.

Original languageEnglish
Pages (from-to)6339-6349
Number of pages11
JournalJournal of Materials Science
Issue number9
StatePublished - May 1 2018


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