Investigation of the electrical and chemical properties of plasma-treated AlGaN

X. A. Cao; H. Piao; S. F. LeBoeuf; J. Y. Lin; H. X. Jiang

doi:10.1557/proc-0955-i16-04

Investigation of the electrical and chemical properties of plasma-treated AlGaN

X. A. Cao, H. Piao, S. F. LeBoeuf, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The surface properties of n-type Al_xGa_1-xN (x=0-0.5) exposed to inductively couple plasma were studied systematically using metal contact measurements and X-ray photoelectron spectroscopy (XPS). Cl ₂/BCl₃ and Ar plasma treatment considerably increased the surface conductivity of Al_xGa_1-xN (x<0.3) and thus improved the characteristics of Ti/Al-based ohmic contacts, but degraded the surface and contact properties of Al_xGa_1-xN (x≥0.3). XPS measurements revealed a significant increase in oxygen incorporation and energy shifts of the core-level spectra in plasma-treated samples. In contrast to an upward shift of the surface Fermi level in plasma-treated GaN, the surface Fermi level moved away from the conduction band in Al_0.5Ga _0.5N upon treatment. These findings suggest that the nature of plasma damage in AlGaN appears to be a function of the Al content. Plasma damage in high-Al AlGaN may act as deeplevel compensation centers, degrading the surface electrical properties and contact characteristics.

Original language	English
Title of host publication	Advances in III-V Nitride Semiconductor Materials and Devices
Publisher	Materials Research Society
Pages	1-6
Number of pages	6
ISBN (Print)	9781604234114
DOIs	https://doi.org/10.1557/proc-0955-i16-04
State	Published - 2006
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: Nov 27 2006 → Dec 1 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	955
ISSN (Print)	0272-9172

Conference

Conference	2006 MRS Fall Meeting
Country	United States
City	Boston, MA
Period	11/27/06 → 12/1/06

Access to Document

10.1557/proc-0955-i16-04

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Cao, X. A., Piao, H., LeBoeuf, S. F., Lin, J. Y., & Jiang, H. X. (2006). Investigation of the electrical and chemical properties of plasma-treated AlGaN. In Advances in III-V Nitride Semiconductor Materials and Devices (pp. 1-6). (Materials Research Society Symposium Proceedings; Vol. 955). Materials Research Society. https://doi.org/10.1557/proc-0955-i16-04

@inproceedings{e3134f894ac74253b5379a54d5b52291,

title = "Investigation of the electrical and chemical properties of plasma-treated AlGaN",

abstract = "The surface properties of n-type AlxGa1-xN (x=0-0.5) exposed to inductively couple plasma were studied systematically using metal contact measurements and X-ray photoelectron spectroscopy (XPS). Cl 2/BCl3 and Ar plasma treatment considerably increased the surface conductivity of AlxGa1-xN (x<0.3) and thus improved the characteristics of Ti/Al-based ohmic contacts, but degraded the surface and contact properties of AlxGa1-xN (x≥0.3). XPS measurements revealed a significant increase in oxygen incorporation and energy shifts of the core-level spectra in plasma-treated samples. In contrast to an upward shift of the surface Fermi level in plasma-treated GaN, the surface Fermi level moved away from the conduction band in Al0.5Ga 0.5N upon treatment. These findings suggest that the nature of plasma damage in AlGaN appears to be a function of the Al content. Plasma damage in high-Al AlGaN may act as deeplevel compensation centers, degrading the surface electrical properties and contact characteristics.",

author = "Cao, {X. A.} and H. Piao and LeBoeuf, {S. F.} and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2006",

doi = "10.1557/proc-0955-i16-04",

language = "English",

isbn = "9781604234114",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "1--6",

booktitle = "Advances in III-V Nitride Semiconductor Materials and Devices",

note = "null ; Conference date: 27-11-2006 Through 01-12-2006",

}

Cao, XA, Piao, H, LeBoeuf, SF, Lin, JY & Jiang, HX 2006, Investigation of the electrical and chemical properties of plasma-treated AlGaN. in Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society Symposium Proceedings, vol. 955, Materials Research Society, pp. 1-6, 2006 MRS Fall Meeting, Boston, MA, United States, 11/27/06. https://doi.org/10.1557/proc-0955-i16-04

Investigation of the electrical and chemical properties of plasma-treated AlGaN. / Cao, X. A.; Piao, H.; LeBoeuf, S. F.; Lin, J. Y.; Jiang, H. X.

Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society, 2006. p. 1-6 (Materials Research Society Symposium Proceedings; Vol. 955).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Investigation of the electrical and chemical properties of plasma-treated AlGaN

AU - Cao, X. A.

AU - Piao, H.

AU - LeBoeuf, S. F.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2006

Y1 - 2006

N2 - The surface properties of n-type AlxGa1-xN (x=0-0.5) exposed to inductively couple plasma were studied systematically using metal contact measurements and X-ray photoelectron spectroscopy (XPS). Cl 2/BCl3 and Ar plasma treatment considerably increased the surface conductivity of AlxGa1-xN (x<0.3) and thus improved the characteristics of Ti/Al-based ohmic contacts, but degraded the surface and contact properties of AlxGa1-xN (x≥0.3). XPS measurements revealed a significant increase in oxygen incorporation and energy shifts of the core-level spectra in plasma-treated samples. In contrast to an upward shift of the surface Fermi level in plasma-treated GaN, the surface Fermi level moved away from the conduction band in Al0.5Ga 0.5N upon treatment. These findings suggest that the nature of plasma damage in AlGaN appears to be a function of the Al content. Plasma damage in high-Al AlGaN may act as deeplevel compensation centers, degrading the surface electrical properties and contact characteristics.

AB - The surface properties of n-type AlxGa1-xN (x=0-0.5) exposed to inductively couple plasma were studied systematically using metal contact measurements and X-ray photoelectron spectroscopy (XPS). Cl 2/BCl3 and Ar plasma treatment considerably increased the surface conductivity of AlxGa1-xN (x<0.3) and thus improved the characteristics of Ti/Al-based ohmic contacts, but degraded the surface and contact properties of AlxGa1-xN (x≥0.3). XPS measurements revealed a significant increase in oxygen incorporation and energy shifts of the core-level spectra in plasma-treated samples. In contrast to an upward shift of the surface Fermi level in plasma-treated GaN, the surface Fermi level moved away from the conduction band in Al0.5Ga 0.5N upon treatment. These findings suggest that the nature of plasma damage in AlGaN appears to be a function of the Al content. Plasma damage in high-Al AlGaN may act as deeplevel compensation centers, degrading the surface electrical properties and contact characteristics.

UR - http://www.scopus.com/inward/record.url?scp=40949097825&partnerID=8YFLogxK

U2 - 10.1557/proc-0955-i16-04

DO - 10.1557/proc-0955-i16-04

M3 - Conference contribution

AN - SCOPUS:40949097825

SN - 9781604234114

T3 - Materials Research Society Symposium Proceedings

SP - 1

EP - 6

BT - Advances in III-V Nitride Semiconductor Materials and Devices

PB - Materials Research Society

Y2 - 27 November 2006 through 1 December 2006

ER -