Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes

X. A. Cao, S. F. LeBoeuf, K. H. Kim, P. M. Sandvik, E. B. Stokes, A. Ebong, D. Walker, J. Kretchmer, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


The mechanisms of carrier injection and recombination in a GaN/InGaN single quantum well light-emitting diodes have been studied. Strong defect-assisted tunneling behavior has been observed in both forward and reverse current-voltage characteristics. In addition to band-edge emission at 400 nm, the electroluminescence has also been attributed to radiative tunneling from band-to-deep level states and band-to-band tail states. The approximately current-squared dependence of light intensity at 400 nm even at high currents indicates dominant nonradiative recombination through deep-lying states within the space-charge region. Inhomogeneous avalanche breakdown luminescence, which is primarily caused by deep-level recombination, suggests a nonuniform spatial distribution of reverse leakage in these diodes.

Original languageEnglish
Pages (from-to)2291-2294
Number of pages4
JournalSolid-State Electronics
Issue number12
StatePublished - Dec 2002


  • GaN
  • Light-emitting diode
  • Nonradiative recombination
  • Radiative tunneling


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