Investigation of power MOSFET switching at cryogenic temperatures

M. Giesselmann, Zia Mahmud, Scott Carson

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

Operation of power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) at cryogenic temperatures significantly reduces conduction losses and increases power handling capability. High voltage (1000 V+) devices exhibit the largest reduction of conduction losses. The breakdown voltage of the devices is reduced by about 20% when cooled from 75 °F down to -319 °F.

Original languageEnglish
Pages (from-to)47-50
Number of pages4
JournalIEEE Conference Record of Power Modulator Symposium
StatePublished - 1996
EventProceedings of the 1996 22nd International Power Modulator Symposium - Boca Raton, FL, USA
Duration: Jun 24 1996Jun 27 1996

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