Operation of power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) at cryogenic temperatures significantly reduces conduction losses and increases power handling capability. High voltage (1000 V+) devices exhibit the largest reduction of conduction losses. The breakdown voltage of the devices is reduced by about 20% when cooled from 75 °F down to -319 °F.
|Number of pages||4|
|Journal||IEEE Conference Record of Power Modulator Symposium|
|State||Published - 1996|
|Event||Proceedings of the 1996 22nd International Power Modulator Symposium - Boca Raton, FL, USA|
Duration: Jun 24 1996 → Jun 27 1996