Abstract
Operation of power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) at cryogenic temperatures significantly reduces conduction losses and increases power handling capability. High voltage (1000 V+) devices exhibit the largest reduction of conduction losses. The breakdown voltage of the devices is reduced by about 20% when cooled from 75 °F down to -319 °F.
| Original language | English |
|---|---|
| Pages (from-to) | 47-50 |
| Number of pages | 4 |
| Journal | IEEE Conference Record of Power Modulator Symposium |
| State | Published - 1996 |
| Event | Proceedings of the 1996 22nd International Power Modulator Symposium - Boca Raton, FL, USA Duration: Jun 24 1996 → Jun 27 1996 |