Investigation of GaN Photoconductive Semiconductor Switches

Nicholas A. Wilson, Jared A. Culpepper, Vladimir Kuryatkov, Matthew Gaddy, James C. DIckens, Sergey Nikishin, Richard Ness, Andreas A. Neuber

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The suitability of commercially available wide bandgap GaN material for the fabrication of photoconductive semiconductor switches, PCSS, was investigated. A variety of PCSSs were fabricated utilizing diverse GaN samples, which were shown to exhibit significantly diverse physical properties. That is, sample characterization techniques such as cathodoluminescence (CL), photoluminescence (PL), secondary ion mass spectrometry (SIMS), Current-Voltage behavior, and scanning electron microscopy (SEM) were applied to characterize the samples prior to processing.

Original languageEnglish
Title of host publicationICOPS 2018 - 45th IEEE International Conference on Plasma Science
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538645895
DOIs
StatePublished - Jun 24 2018
Event45th IEEE International Conference on Plasma Science, ICOPS 2018 - Denver, United States
Duration: Jun 24 2018Jun 28 2018

Publication series

NameIEEE International Conference on Plasma Science
Volume2018-June
ISSN (Print)0730-9244

Conference

Conference45th IEEE International Conference on Plasma Science, ICOPS 2018
Country/TerritoryUnited States
CityDenver
Period06/24/1806/28/18

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